The growth of III-V semiconductor core-shell nanowires by Au-catalyzed metal organic chemical vapor deposition is described. The effect of growth conditions on the properties of the nanowires is discussed. Results nanowire solar cells and lasers are also presented. © 2012 IEEE
Semiconductor nanowires are routinely grown on high-priced crystalline substrates as it is extremely...
We review various III-V compound semiconductor nanowires grown by MOCVD, mainly focusing on their ph...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VL...
The growth of III-V semiconductor core-shell nanowires by Au-catalyzed metal organic chemical vapor ...
The optical and structural properties of binary and ternary III-V nanowires including GaAs, InP, In(...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of t...
We report on the self-assembly by Au-catalyzed metalorganic vapor phase epitaxy (MOVPE) of GaAs-base...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposi...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic...
High density (In)GaAs/GaAs/AlGaAs nanowires (NWs) consisting of n-type core and p-type shell have be...
Summary form only given. In the last few years, semiconductor nanowires (NWs) have attracted intensi...
In this study, we report the growth of core-shell GaAsP nanowires using metal-organic chemical vapor...
Semiconductor nanowires are routinely grown on high-priced crystalline substrates as it is extremely...
We review various III-V compound semiconductor nanowires grown by MOCVD, mainly focusing on their ph...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VL...
The growth of III-V semiconductor core-shell nanowires by Au-catalyzed metal organic chemical vapor ...
The optical and structural properties of binary and ternary III-V nanowires including GaAs, InP, In(...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of t...
We report on the self-assembly by Au-catalyzed metalorganic vapor phase epitaxy (MOVPE) of GaAs-base...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposi...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic...
High density (In)GaAs/GaAs/AlGaAs nanowires (NWs) consisting of n-type core and p-type shell have be...
Summary form only given. In the last few years, semiconductor nanowires (NWs) have attracted intensi...
In this study, we report the growth of core-shell GaAsP nanowires using metal-organic chemical vapor...
Semiconductor nanowires are routinely grown on high-priced crystalline substrates as it is extremely...
We review various III-V compound semiconductor nanowires grown by MOCVD, mainly focusing on their ph...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VL...