Add to ORKGThe sidewalk of Au-catalysed GaAs nanowires are studied systematically by using transmission electron microscopy. The cross-sectional shape of the VLS grown nanowires was found to consist of 3 curved surfaces along {112}A. The curved surfaces evolve into three {112}A and three {112}B facets towards the base of the nanowire due to the radial growth around the nanowire. These sidewalls transform to {110} facets at high temperature annealing and the transformation rate is determined by the cross-sectional shape and size of the nanowires
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
In this paper, GaAs nanowires with different V/III ratios (70, 140, 280 and 560) were vertically gro...
With increasing interest in nanowire-based devices, a thorough understanding of the nanowire shape i...
The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of Ga...
Au-catalyzed self-assembly of GaAs nanowires on (1¯1¯1¯)B GaAs by metalorganic vapor phase epitaxy i...
The movement of Au catalysts during growth of InAs on GaAs nanowires has been carefully investigated...
We investigated by means of transmission electron microscopy (TEM) the final growth stage of GaAs/Al...
We investigated by means of transmission electron microscopy (TEM) GaAs-AlGaAs core-shell nanowires ...
In this study, the effect of substrate orientation on the structural properties of GaAs nanowires gr...
We have investigated the growth of GaAs nanowires as a function of temperatures and source pressures...
During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowire...
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
In this work, the morphology and crystal structure of epitaxial semiconductor nanowire structures gr...
During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowire...
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
In this paper, GaAs nanowires with different V/III ratios (70, 140, 280 and 560) were vertically gro...
With increasing interest in nanowire-based devices, a thorough understanding of the nanowire shape i...
The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of Ga...
Au-catalyzed self-assembly of GaAs nanowires on (1¯1¯1¯)B GaAs by metalorganic vapor phase epitaxy i...
The movement of Au catalysts during growth of InAs on GaAs nanowires has been carefully investigated...
We investigated by means of transmission electron microscopy (TEM) the final growth stage of GaAs/Al...
We investigated by means of transmission electron microscopy (TEM) GaAs-AlGaAs core-shell nanowires ...
In this study, the effect of substrate orientation on the structural properties of GaAs nanowires gr...
We have investigated the growth of GaAs nanowires as a function of temperatures and source pressures...
During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowire...
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
In this work, the morphology and crystal structure of epitaxial semiconductor nanowire structures gr...
During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowire...
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
In this paper, GaAs nanowires with different V/III ratios (70, 140, 280 and 560) were vertically gro...