Add to ORKGHigh voltage GaAs pHEMT technology with field plated gates has been in development at TriQuint since 2000, resulting in three processes that deliver state of the art performance up to Ku-band. We report on an S-band optimized version that will soon be transferred to production. At 3.5 GHz, it delivers power output density of 2.1 W/mm and 64 % PAE at 28 V. This technology is optimal for designing high power MMICs at S-band and provides a competitive alternative to GaN and SiC devices especially when cost, reliability and maturity are considered
As an extension of M/A-COM’s 10V MSAGTM power process, we have demonstrated an ion-implanted, MMIC-c...
AbstractA topic of much debate in gallium arsenide IC manufacturing currently is the challenge to HB...
Abstract- For sensor and communication system applications, Monolithic Microwave Integrated Circuits...
High voltage GaAs pHEMT technology with field plated gates has been in development at TriQuint since...
High Voltage Breakdown (HVB) HPA MMIC based on GaAs pHEMTs technology represents a useful way for hi...
Very high voltage breakdown pHEMTs have been successfully developed by implementing a field-plate (F...
A low cost fabrication process based on field-plated GaAs pHEMT for X-Band applications is presented...
A successful development of a very high performance and reliable 0.1 m m power PHEMT MMIC technology...
Emerging technologies like SiC and GaN offer the potential for manufacturable high performance micro...
A high performance, high yield, and high throughput millimeter-wave, Q band, power pHEMT process tec...
In this study, a novel manufacturing process for a 0.1 lm T-gate is investigated for producing a hig...
This paper presents the results obtained both by experimental measurements and numerical simulations...
TriQuint Semiconductor, Texas has developed a very reproducible, high yield, and high reliability, 0...
This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technolo...
This paper presents the results obtained both by experimental measurements and numerical simulations...
As an extension of M/A-COM’s 10V MSAGTM power process, we have demonstrated an ion-implanted, MMIC-c...
AbstractA topic of much debate in gallium arsenide IC manufacturing currently is the challenge to HB...
Abstract- For sensor and communication system applications, Monolithic Microwave Integrated Circuits...
High voltage GaAs pHEMT technology with field plated gates has been in development at TriQuint since...
High Voltage Breakdown (HVB) HPA MMIC based on GaAs pHEMTs technology represents a useful way for hi...
Very high voltage breakdown pHEMTs have been successfully developed by implementing a field-plate (F...
A low cost fabrication process based on field-plated GaAs pHEMT for X-Band applications is presented...
A successful development of a very high performance and reliable 0.1 m m power PHEMT MMIC technology...
Emerging technologies like SiC and GaN offer the potential for manufacturable high performance micro...
A high performance, high yield, and high throughput millimeter-wave, Q band, power pHEMT process tec...
In this study, a novel manufacturing process for a 0.1 lm T-gate is investigated for producing a hig...
This paper presents the results obtained both by experimental measurements and numerical simulations...
TriQuint Semiconductor, Texas has developed a very reproducible, high yield, and high reliability, 0...
This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technolo...
This paper presents the results obtained both by experimental measurements and numerical simulations...
As an extension of M/A-COM’s 10V MSAGTM power process, we have demonstrated an ion-implanted, MMIC-c...
AbstractA topic of much debate in gallium arsenide IC manufacturing currently is the challenge to HB...
Abstract- For sensor and communication system applications, Monolithic Microwave Integrated Circuits...