4H-SiC schottky diodes for temperature sensing applications in harsh environments

© (2011) Trans Tech Publications, Switzerland.4H-SiC Schottky Barrier Diodes (SBDs) with remarkable electrical performance have been fabricated and characterised. A barrier height about 1.64V and an ideality factor close to 1 are extracted from the forward characteristics measured at several temperatures. These essential Schottky contact parameters are obseived to be constant with temperature. A temperature probe with a simple and innovative scheme is designed and applied. The probe uses SiC SBDs as temperature sensor in the 20-400° C range, with measured sensitivities varying from 1.3 mV/K to 2.8 m V/K. The probe is meant to monitorize the temperature inside the furnaces, in the cement industry