Add to ORKGAxial heterostructure nanowires with Si and SiGe segments have been grown using Au metal seed as catalyst by chemical vapor deposition (CVD) via vapor-liquid-solid process (VLS). We report on the effect of growth intervention on the droplet stability which in turn modifies NW morphology and interfacial abruptness. Growth stop of 2 minutes on transition from one material to another have been demonstrated to suppress reservoir effect by Au catalyst. The two SiGe/Si and Si/SiGe heterointerfaces are found to be assymetric. The former being diffused while the latter one is sharp. Furthermore, geometric phase analysis reports elastic deformation at the heterointerface. Nanowire undergoes rotation in both clock and anticlockwise direction at their...
Silicon nanowires with axially varying n- and p-doping were grown by the vapor-liquid-solid approach...
The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. T...
Herein, we report the formation of multisegment Si–Ge axial heterostructure nanowires in a wet chemi...
Axial Si-Si1-xGex heterostructured nanowires were grown by Au-catalyzed vapor-liquid-solid method. I...
International audienceFor most applications, heterostructures in nanowires (NWs) with lattice mismat...
The use of Ga-Au alloys of different compositions as metal catalysts for the growth of abrupt SiGe/S...
As MOSFETs are scaled down, power dissipation remains the most challenging bottleneck for nanoelectr...
Axial Si/Ge heterostructure nanowires, despite their promise in applications ranging from electronic...
The mechanisms and kinetics of axial Ge-Si nanowire heteroepitaxial growth based on the tailoring of...
Axial Si/Ge heterostructure nanowires, despite their promise in applications ranging from electronic...
The vapour–liquid–solid (VLS) method is by far the most extended procedure for bottom-up nanowire g...
Here we describe a relatively facile synthetic protocol for the formation of Si-Ge and Si-Ge-Si1-xGe...
International audienceUnderstanding and controlling the structural properties of Ge nanowires are im...
Silicon nanowires with axially varying n- and p-doping were grown by the vapor-liquid-solid approach...
The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. T...
Herein, we report the formation of multisegment Si–Ge axial heterostructure nanowires in a wet chemi...
Axial Si-Si1-xGex heterostructured nanowires were grown by Au-catalyzed vapor-liquid-solid method. I...
International audienceFor most applications, heterostructures in nanowires (NWs) with lattice mismat...
The use of Ga-Au alloys of different compositions as metal catalysts for the growth of abrupt SiGe/S...
As MOSFETs are scaled down, power dissipation remains the most challenging bottleneck for nanoelectr...
Axial Si/Ge heterostructure nanowires, despite their promise in applications ranging from electronic...
The mechanisms and kinetics of axial Ge-Si nanowire heteroepitaxial growth based on the tailoring of...
Axial Si/Ge heterostructure nanowires, despite their promise in applications ranging from electronic...
The vapour–liquid–solid (VLS) method is by far the most extended procedure for bottom-up nanowire g...
Here we describe a relatively facile synthetic protocol for the formation of Si-Ge and Si-Ge-Si1-xGe...
International audienceUnderstanding and controlling the structural properties of Ge nanowires are im...
Silicon nanowires with axially varying n- and p-doping were grown by the vapor-liquid-solid approach...
The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. T...
Herein, we report the formation of multisegment Si–Ge axial heterostructure nanowires in a wet chemi...