Add to ORKGEffective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding goal of research on germanium metal-oxide-semiconductor devices. In this paper, we use photoelectron spectroscopy to probe the formation of a GeO2 interface layer between an atomic layer deposited Al2O3 gate dielectric and a Ge(100) substrate during forming gas anneal (FGA). Capacitance- and conductance-voltage data were used to extract the interface trap density energy distribution. These results show selective passivation of interface traps with energies in the top half of the Ge band gap under annealing conditions that produce GeO2 interface layer growth. First-principles modeling of Ge/GeO2 and Ge/GeO/GeO2 structures and calculations of the...
An imperative factor in adapting GeSn as the channel material in CMOS technology, is the gate-oxide ...
We review a series of first-principles studies on the defect generation mechanism and electronic str...
Surfaces of semiconductors are notorious for the presence of electronic defects such that passivatio...
Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding go...
Due to the high carrier mobility, Ge and III-V semiconductors are attractive as active channels for ...
Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic ...
The physical and electrical properties of Ge/GeO2/high-κ gate stacks, where the GeO2 interlayer is t...
In search of a proper passivation for high-k Ge metal-oxide-semiconductor devices, the authors have ...
We study the impact of the atomic layer deposition high-k gate insulators on metal–oxide–semiconduct...
AbstractThe paper addresses the passivation of Germanium surfaces by using layered La2O3/ZrO2 high-k...
The energy band alignment between Ge, HfO2 and Al2O3 was analyzed as influenced by passivating inter...
In this work atomic layer deposited Tm2O3 has been investigated as a high-k dielectric for Ge-based ...
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel material (o...
High mobility semiconductors such as Ge with high-k gates may be required to enhance performance of ...
The structural and electronic properties of (100)Ge/Ge(M)O-2 interfaces, with M=Al, La, or Hf, are i...
An imperative factor in adapting GeSn as the channel material in CMOS technology, is the gate-oxide ...
We review a series of first-principles studies on the defect generation mechanism and electronic str...
Surfaces of semiconductors are notorious for the presence of electronic defects such that passivatio...
Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding go...
Due to the high carrier mobility, Ge and III-V semiconductors are attractive as active channels for ...
Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic ...
The physical and electrical properties of Ge/GeO2/high-κ gate stacks, where the GeO2 interlayer is t...
In search of a proper passivation for high-k Ge metal-oxide-semiconductor devices, the authors have ...
We study the impact of the atomic layer deposition high-k gate insulators on metal–oxide–semiconduct...
AbstractThe paper addresses the passivation of Germanium surfaces by using layered La2O3/ZrO2 high-k...
The energy band alignment between Ge, HfO2 and Al2O3 was analyzed as influenced by passivating inter...
In this work atomic layer deposited Tm2O3 has been investigated as a high-k dielectric for Ge-based ...
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel material (o...
High mobility semiconductors such as Ge with high-k gates may be required to enhance performance of ...
The structural and electronic properties of (100)Ge/Ge(M)O-2 interfaces, with M=Al, La, or Hf, are i...
An imperative factor in adapting GeSn as the channel material in CMOS technology, is the gate-oxide ...
We review a series of first-principles studies on the defect generation mechanism and electronic str...
Surfaces of semiconductors are notorious for the presence of electronic defects such that passivatio...