Add to ORKG© 2015 IEEE. The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized
The planar Integrated Gate Commutated Thyristor (IGCT) concept is proposed to simplify the fabricati...
The IGBT has become the device of choice in many high-voltage-power electronic applications, by virt...
Hybrid DC Breakers (HCBs) are crucial components in modern DC systems. Integrated Gate Commutated Th...
The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thy...
The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thy...
The Bi-mode Gate Commutated Thyristor (BGCT) is an advanced reverse conducting device aiming high po...
The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT)...
The bi-mode gate commutated thyristor (GCT) is an advanced reverse conducting device aiming high-pow...
In this work we present the first experimental results of a Bi-mode Gate Commutated Thyristor (BGCT)...
In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard g...
The model of interconnected numerical device segments can give a prediction on the dynamic performan...
Abstract. Until recently, the Gate Commutated Thyristor (GCT) was regarded as the ideal device for v...
Hybrid DC Breakers (HCBs) are crucial components in modern DC systems. Integrated Gate Commutated Th...
In this paper we present a wafer level three-dimensional simulation model of the Gate Commutated Thy...
Hybrid DC Breakers (HCBs) are crucial components in modern DC systems. Integrated Gate Commutated Th...
The planar Integrated Gate Commutated Thyristor (IGCT) concept is proposed to simplify the fabricati...
The IGBT has become the device of choice in many high-voltage-power electronic applications, by virt...
Hybrid DC Breakers (HCBs) are crucial components in modern DC systems. Integrated Gate Commutated Th...
The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thy...
The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thy...
The Bi-mode Gate Commutated Thyristor (BGCT) is an advanced reverse conducting device aiming high po...
The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT)...
The bi-mode gate commutated thyristor (GCT) is an advanced reverse conducting device aiming high-pow...
In this work we present the first experimental results of a Bi-mode Gate Commutated Thyristor (BGCT)...
In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard g...
The model of interconnected numerical device segments can give a prediction on the dynamic performan...
Abstract. Until recently, the Gate Commutated Thyristor (GCT) was regarded as the ideal device for v...
Hybrid DC Breakers (HCBs) are crucial components in modern DC systems. Integrated Gate Commutated Th...
In this paper we present a wafer level three-dimensional simulation model of the Gate Commutated Thy...
Hybrid DC Breakers (HCBs) are crucial components in modern DC systems. Integrated Gate Commutated Th...
The planar Integrated Gate Commutated Thyristor (IGCT) concept is proposed to simplify the fabricati...
The IGBT has become the device of choice in many high-voltage-power electronic applications, by virt...
Hybrid DC Breakers (HCBs) are crucial components in modern DC systems. Integrated Gate Commutated Th...