Add to ORKGThis paper reports the experimental evidence of a new minority carrier injection mechanism. The new physical mechanism earlier proposed by us is based on the use of a MOS inversion layer as a minority carrier injector as part of a dynamic junction. Unlike in conventional devices, the physical existence of the emitter and the carrier injection of such a junction is entirely controlled by the MOS gate. A new class of semiconductor devices based on inversion layer injection is presented
A silicon gated diode, being evolved from MOSFET technology and utilizing a half of MOSFET, has been...
An inversion current in unipolar organic field-effect transistors is not observed, which can be due ...
The authors report on the exptl. detn. of inversion electron charge d., silicon surface potential, a...
This paper reports the experimental evidence of a new minority carrier injection mechanism. The new ...
This paper examines in detail the phenomenon of Substrate Enhanced Electron Injection (SEEI). By usi...
MOS gated power devices are now available for power switching applications with voltage blocking req...
Abstract|The name "charge injection " describes the opera-tion of a generic class of elect...
In this thesis selected applications of both minority and majority carrier conductor- thin insulator...
We present device model calculations for the current–voltage (I–V) characteristics of organic diodes...
This paper addresses the problem of the origin of majority and minority carriers' substrate currents...
An inversion layer can be present at the metal-semiconductor interface of Schottky diodes with a hig...
Abstract: In this paper, an analytical model has been developed to study inversion layer quantizatio...
An improved model of minority carrier injection into polysilicon emitter has been proposed. Minority...
A new theory about minority carrier injection into polysilicon emitter was proposed in this paper. T...
The central topic of this thesis is the semiconductor surface junction of which two types will be di...
A silicon gated diode, being evolved from MOSFET technology and utilizing a half of MOSFET, has been...
An inversion current in unipolar organic field-effect transistors is not observed, which can be due ...
The authors report on the exptl. detn. of inversion electron charge d., silicon surface potential, a...
This paper reports the experimental evidence of a new minority carrier injection mechanism. The new ...
This paper examines in detail the phenomenon of Substrate Enhanced Electron Injection (SEEI). By usi...
MOS gated power devices are now available for power switching applications with voltage blocking req...
Abstract|The name "charge injection " describes the opera-tion of a generic class of elect...
In this thesis selected applications of both minority and majority carrier conductor- thin insulator...
We present device model calculations for the current–voltage (I–V) characteristics of organic diodes...
This paper addresses the problem of the origin of majority and minority carriers' substrate currents...
An inversion layer can be present at the metal-semiconductor interface of Schottky diodes with a hig...
Abstract: In this paper, an analytical model has been developed to study inversion layer quantizatio...
An improved model of minority carrier injection into polysilicon emitter has been proposed. Minority...
A new theory about minority carrier injection into polysilicon emitter was proposed in this paper. T...
The central topic of this thesis is the semiconductor surface junction of which two types will be di...
A silicon gated diode, being evolved from MOSFET technology and utilizing a half of MOSFET, has been...
An inversion current in unipolar organic field-effect transistors is not observed, which can be due ...
The authors report on the exptl. detn. of inversion electron charge d., silicon surface potential, a...