Add to ORKGA 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extensive numerical simulations, analytical modeling using a mathematically developed PIN diode-PNP transistor model and optimisation of Trench IGBTs are carried out. It is concluded that an optimised Trench IGBT is potentially the leading structure of the next generation of high voltage devices
IGBT (Insulated Gate Bipolar Junction) is the combination of MOSFET and BJT. It has low input impeda...
In this work, we propose an Insulated Gate Bipolar Transistor (IGBT) with a novel lateral triple tre...
An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based ...
A 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extens...
This paper presents preliminary results towards developing the next generation of Insulated Gate Bip...
This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transisto...
A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor w...
The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next gen...
This thesis is focused on the selection and optimalization of suitable analytical methods for study ...
The drive towards the rational use of energy demands fast, reliable, efficient and low-cost power sw...
Abstract: The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most cu...
Abstract In this paper, a new trench‐gate field‐stop insulated gate bipolar transistor (IGBT) struct...
[[abstract]]In this paper, we investigate the behavior of 1200V Punch-Through, Trench gate, Field st...
This project serves as a study to determine the feasibility of the current CMOS toolsets and process...
The insulated gate bipolar transistor (IGBT) is arguably the most important device currently used in...
IGBT (Insulated Gate Bipolar Junction) is the combination of MOSFET and BJT. It has low input impeda...
In this work, we propose an Insulated Gate Bipolar Transistor (IGBT) with a novel lateral triple tre...
An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based ...
A 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extens...
This paper presents preliminary results towards developing the next generation of Insulated Gate Bip...
This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transisto...
A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor w...
The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next gen...
This thesis is focused on the selection and optimalization of suitable analytical methods for study ...
The drive towards the rational use of energy demands fast, reliable, efficient and low-cost power sw...
Abstract: The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most cu...
Abstract In this paper, a new trench‐gate field‐stop insulated gate bipolar transistor (IGBT) struct...
[[abstract]]In this paper, we investigate the behavior of 1200V Punch-Through, Trench gate, Field st...
This project serves as a study to determine the feasibility of the current CMOS toolsets and process...
The insulated gate bipolar transistor (IGBT) is arguably the most important device currently used in...
IGBT (Insulated Gate Bipolar Junction) is the combination of MOSFET and BJT. It has low input impeda...
In this work, we propose an Insulated Gate Bipolar Transistor (IGBT) with a novel lateral triple tre...
An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based ...