Add to ORKGThe theory of doping limits in semiconductors and insulators is applied to the case of wide gap oxides, crystalline, or amorphous, and used to explain that impurities do not in general give rise to gap states or a doping response. Instead, the system tends to form defect complexes or undergo symmetry-lowering reconstructions to expel gap states out of the band gap. The model is applied to impurities, such as trivalent metals, carbon, N, P, and B, in HfO2, the main gate dielectric used in field effect transistors. © 2014 AIP Publishing LLC
A systematic first-principles study using density functional theory was performed on dopants in HfO2...
Although monolayer HfS2 and SnS2 do not have a direct bandgap like MoS2, they have much higher carri...
Kröger–Vink diagrams (KVD) are used to visualize the concentrations of defects across different the...
This letter presents calculations of the energy levels of the oxygen vacancy and oxygen interstitial...
Rare earth doping is an important approach to improve the desired properties of high-k gate dielectr...
The ability to shrink Si-based transistors is reaching the spatial scale of sub-0.1 µm, close to fun...
The role of defects in materials is one of the long-standingissues in solid-state chemistry and phys...
Nitrogen is known to reduce leakage currents and charge trapping in high-dielectric-constant gate ox...
A new framework for first-principle simulation on random charging/discharging of individual oxide tr...
Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors...
ABSTRACT First-principles density functional calculations are performed to investigate the electroni...
The impact of lanthanum (La) on positive-bias temperature instability (PBTI) is examined via first-p...
The role of defects in materials is one of the long-standing issues in solid-state chemistry and phy...
Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied unravel...
Understanding the effect of electric fields on defect creation and diffusion in metal oxides is of f...
A systematic first-principles study using density functional theory was performed on dopants in HfO2...
Although monolayer HfS2 and SnS2 do not have a direct bandgap like MoS2, they have much higher carri...
Kröger–Vink diagrams (KVD) are used to visualize the concentrations of defects across different the...
This letter presents calculations of the energy levels of the oxygen vacancy and oxygen interstitial...
Rare earth doping is an important approach to improve the desired properties of high-k gate dielectr...
The ability to shrink Si-based transistors is reaching the spatial scale of sub-0.1 µm, close to fun...
The role of defects in materials is one of the long-standingissues in solid-state chemistry and phys...
Nitrogen is known to reduce leakage currents and charge trapping in high-dielectric-constant gate ox...
A new framework for first-principle simulation on random charging/discharging of individual oxide tr...
Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors...
ABSTRACT First-principles density functional calculations are performed to investigate the electroni...
The impact of lanthanum (La) on positive-bias temperature instability (PBTI) is examined via first-p...
The role of defects in materials is one of the long-standing issues in solid-state chemistry and phy...
Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied unravel...
Understanding the effect of electric fields on defect creation and diffusion in metal oxides is of f...
A systematic first-principles study using density functional theory was performed on dopants in HfO2...
Although monolayer HfS2 and SnS2 do not have a direct bandgap like MoS2, they have much higher carri...
Kröger–Vink diagrams (KVD) are used to visualize the concentrations of defects across different the...