Add to ORKGThe growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed. © 2005 IEEE
In this study, Pd thin film is used as catalyst to grow epitaxial InAs nanowires on GaAs(111)B subst...
We report the epitaxial growth of defect-free zinc blende Structured InAS nanowires on GaAs{111}(B) ...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
Epitaxial growth of vertical GaAs nanowires on Si (111) substrates is demonstrated by metal-organic ...
We investigate the Au-assisted growth of InAs nanowires on two different kinds of heterostructured s...
Growth behavior in Axial InAs/GaAs nanowire heterostructures was observed as they have important app...
Growth behavior in Axial InAs/GaAs nanowire heterostructures was observed as they have important app...
We investigate the Au-assisted growth of InAs nanowires on two different kinds of heterostructured s...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...
In this study, Pd thin film is used as catalyst to grow epitaxial InAs nanowires on GaAs(111)B subst...
In this study, Pd thin film is used as catalyst to grow epitaxial InAs nanowires on GaAs(111)B subst...
We report the epitaxial growth of defect-free zinc blende Structured InAS nanowires on GaAs{111}(B) ...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
Epitaxial growth of vertical GaAs nanowires on Si (111) substrates is demonstrated by metal-organic ...
We investigate the Au-assisted growth of InAs nanowires on two different kinds of heterostructured s...
Growth behavior in Axial InAs/GaAs nanowire heterostructures was observed as they have important app...
Growth behavior in Axial InAs/GaAs nanowire heterostructures was observed as they have important app...
We investigate the Au-assisted growth of InAs nanowires on two different kinds of heterostructured s...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...
In this study, Pd thin film is used as catalyst to grow epitaxial InAs nanowires on GaAs(111)B subst...
In this study, Pd thin film is used as catalyst to grow epitaxial InAs nanowires on GaAs(111)B subst...
We report the epitaxial growth of defect-free zinc blende Structured InAS nanowires on GaAs{111}(B) ...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...