Add to ORKGIn this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires. © 2008 IEEE
One of the main motivations for the great interest in semiconductor nanowires is the possibility of ...
We present the fabrication of axial InAs/GaAs nanowire heterostructures on silicon with atomically s...
8 pages, 6 figuresControlling the strain level in nanowire heterostructures is critical for obtainin...
In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundam...
Growth behavior in Axial InAs/GaAs nanowire heterostructures was observed as they have important app...
Growth behavior in Axial InAs/GaAs nanowire heterostructures was observed as they have important app...
To observe the axial growth behavior of InAs on GaAs nanowires, InAs was grown for different growth ...
Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of b...
Materials in smaller scales exhibit promising properties that are useful for wide variety of applica...
Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of b...
One of the main motivations for the great interest in semiconductor nanowires is the possibility of ...
One of the main motivations for the great interest in semiconductor nanowires is the possibility of ...
One of the main motivations for the great interest in semiconductor nanowires is the possibility of ...
One of the main motivations for the great interest in semiconductor nanowires is the possibility of ...
We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs subst...
One of the main motivations for the great interest in semiconductor nanowires is the possibility of ...
We present the fabrication of axial InAs/GaAs nanowire heterostructures on silicon with atomically s...
8 pages, 6 figuresControlling the strain level in nanowire heterostructures is critical for obtainin...
In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundam...
Growth behavior in Axial InAs/GaAs nanowire heterostructures was observed as they have important app...
Growth behavior in Axial InAs/GaAs nanowire heterostructures was observed as they have important app...
To observe the axial growth behavior of InAs on GaAs nanowires, InAs was grown for different growth ...
Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of b...
Materials in smaller scales exhibit promising properties that are useful for wide variety of applica...
Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of b...
One of the main motivations for the great interest in semiconductor nanowires is the possibility of ...
One of the main motivations for the great interest in semiconductor nanowires is the possibility of ...
One of the main motivations for the great interest in semiconductor nanowires is the possibility of ...
One of the main motivations for the great interest in semiconductor nanowires is the possibility of ...
We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs subst...
One of the main motivations for the great interest in semiconductor nanowires is the possibility of ...
We present the fabrication of axial InAs/GaAs nanowire heterostructures on silicon with atomically s...
8 pages, 6 figuresControlling the strain level in nanowire heterostructures is critical for obtainin...