Add to ORKGGaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires. © 2010 IEEE
Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs b...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface ...
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface ...
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface ...
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface ...
Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs b...
Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs b...
Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs b...
Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs b...
We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by ...
We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by ...
We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by ...
We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by ...
Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs b...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface ...
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface ...
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface ...
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface ...
Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs b...
Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs b...
Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs b...
Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs b...
We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by ...
We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by ...
We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by ...
We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by ...
Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs b...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-...