Add to ORKGThe destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer. © 2011 IEEE
This paper presents a physics-based compact model of integrated gate-commutated thyristor (IGCT) wit...
In this work, we present a TCAD simulation based analysis on high voltage trench IGBTs during switch...
IGBT with sense emitter cells are used in power applications where current sensing or feedback is ne...
This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyr...
In this paper we present a wafer level three-dimensional simulation model of the Gate Commutated Thy...
The physics of the different failure modes that limit the maximum avalanche capability during unclam...
Within the frame of this thesis turn-off behaviour of IGBTs was investigated, focussed on Trench IGB...
Turn-off dV/dt controllability is an essential feature in IGBTs for flexible design in power switchi...
2-D electrothermal simulations of GTO-thyristor turn-off process including a complete chopper circui...
In today’s high power VSCs (Voltage Source Converters), IGBTs (Insulated Gate Bipolar Transistors) a...
This article proposes a thyristor conduction-insulated gate bipolar transistor (TC-IGBT) with a p-n-...
In this paper, the current paths in avalanche conditions of a Floating Field Ring (FFR) termination ...
The turn-off capability of a power semiconductor is normally given by the datasheet with test condit...
This paper presents a physics-based compact model of integrated gate-commutated thyristor (IGCT) wit...
International audienceIn the paper proposed here, we are studying the dynamic avalanche from experim...
This paper presents a physics-based compact model of integrated gate-commutated thyristor (IGCT) wit...
In this work, we present a TCAD simulation based analysis on high voltage trench IGBTs during switch...
IGBT with sense emitter cells are used in power applications where current sensing or feedback is ne...
This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyr...
In this paper we present a wafer level three-dimensional simulation model of the Gate Commutated Thy...
The physics of the different failure modes that limit the maximum avalanche capability during unclam...
Within the frame of this thesis turn-off behaviour of IGBTs was investigated, focussed on Trench IGB...
Turn-off dV/dt controllability is an essential feature in IGBTs for flexible design in power switchi...
2-D electrothermal simulations of GTO-thyristor turn-off process including a complete chopper circui...
In today’s high power VSCs (Voltage Source Converters), IGBTs (Insulated Gate Bipolar Transistors) a...
This article proposes a thyristor conduction-insulated gate bipolar transistor (TC-IGBT) with a p-n-...
In this paper, the current paths in avalanche conditions of a Floating Field Ring (FFR) termination ...
The turn-off capability of a power semiconductor is normally given by the datasheet with test condit...
This paper presents a physics-based compact model of integrated gate-commutated thyristor (IGCT) wit...
International audienceIn the paper proposed here, we are studying the dynamic avalanche from experim...
This paper presents a physics-based compact model of integrated gate-commutated thyristor (IGCT) wit...
In this work, we present a TCAD simulation based analysis on high voltage trench IGBTs during switch...
IGBT with sense emitter cells are used in power applications where current sensing or feedback is ne...