Add to ORKGA compact trench-gate IGBT model that captures MOS-side carrier injection is developed. The model retains the simplicity of a one-dimensional solution to the ambipolar diffusion equation, but at the same time captures MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms. © 2007 IEEE
An existing physics-based insulated gate bipolar transistor (IGBT) model, which has been proven accu...
Abstract-An engineering model for short-channel MOS devices which includes the effect of carrier dri...
A 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extens...
A compact trench-gate insulated-gate bipolar transistor model that captures MOS-side carrier injecti...
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching devi...
A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor w...
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching devi...
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching devi...
The compact model of an injection enhanced insulatedgate bipolar transistors based on the exponentia...
The Insulated Gate Bipolar Transistor is widely accepted as the preferred switching device in a vari...
MOS gated power devices are now available for power switching applications with voltage blocking req...
[[abstract]]A mathematical method of modeling the gate leakage current IG is presented in this work....
[[abstract]]In this paper, we investigate the behavior of 1200V Punch-Through, Trench gate, Field st...
An explicit carrier-based compact model for the nanowire surrounding-gate (SRG) Metal-oxide-Semicond...
This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transisto...
An existing physics-based insulated gate bipolar transistor (IGBT) model, which has been proven accu...
Abstract-An engineering model for short-channel MOS devices which includes the effect of carrier dri...
A 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extens...
A compact trench-gate insulated-gate bipolar transistor model that captures MOS-side carrier injecti...
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching devi...
A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor w...
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching devi...
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching devi...
The compact model of an injection enhanced insulatedgate bipolar transistors based on the exponentia...
The Insulated Gate Bipolar Transistor is widely accepted as the preferred switching device in a vari...
MOS gated power devices are now available for power switching applications with voltage blocking req...
[[abstract]]A mathematical method of modeling the gate leakage current IG is presented in this work....
[[abstract]]In this paper, we investigate the behavior of 1200V Punch-Through, Trench gate, Field st...
An explicit carrier-based compact model for the nanowire surrounding-gate (SRG) Metal-oxide-Semicond...
This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transisto...
An existing physics-based insulated gate bipolar transistor (IGBT) model, which has been proven accu...
Abstract-An engineering model for short-channel MOS devices which includes the effect of carrier dri...
A 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extens...