Simulated superior performance of superjuction bipolar transistors

This paper presents for the first time an investigation and comparison of the superjunction IGBT (SJBT) as proposed in [1,2] and the current state of art Field Stop IGBT [3,4]. Simulation results indicate the superior performance of the superjunction IGBT under switching conditions. For the same conditions, at a collector current density of 100A/cm2 and on-state voltage 1.6 V the switching off losses for a SJBT and Field-Stop IGBT are 1 and 4.5 mJ/cm 2 respectively. © 2006 IEEE