Add to ORKGThis paper presents a preliminary theoretical and numerical investigation of 4H-SiC JFET and MOSFET at 6.5 kV. To improve the on-state/breakdown performance of the JFET, buried layers in conjunction with a highly doped buffer layer have been used. Trench technology has been employed for the MOSFET. The devices were simulated and optimized using MEDICI[I] simulator. From the comparison between the two devices, it turns out that the JFET offers a better on-state/breakdown trade-off, while the trench MOSFET has the advantage of MOS-control
La thèse intitulée "Conception, caractérisation et optimisation d’un transistor à effet de champ hau...
This thesis concentrates on building a power UMOSFET on SiC. The major problem of the Conventional U...
Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect t...
For solid-state power devices, there exists need for a material with a higher band gap which will re...
In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-re...
The aim of this study is to combine the UMOSFET design with its U-shape trench-gate architecture whi...
This research focuses on the designing and simulation of normally-on and normallyoff 4H-SiC VJFET. I...
In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with...
Silicon Carbide (SiC) devices have the potential to reduce energy losses in high power applications....
4H-Silicon Carbide (4H-SiC) is a promising semiconductor for the next generation of high power, high...
Power converters utilising SiC MOSFETs have attracted significant interest from the automotive indus...
The 4H-SiC power MOSFET is an excellent candidate for power applications. Major technical difficulti...
A novel SiC trench MOSFET with a P-type half-wrapped shield (HW-TMOS) is proposed and analyzed by th...
In this paper, a novel 1200 V SiC trench MOSFET with a laterally widened P-shield region (LW-MOSFET)...
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate ...
La thèse intitulée "Conception, caractérisation et optimisation d’un transistor à effet de champ hau...
This thesis concentrates on building a power UMOSFET on SiC. The major problem of the Conventional U...
Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect t...
For solid-state power devices, there exists need for a material with a higher band gap which will re...
In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-re...
The aim of this study is to combine the UMOSFET design with its U-shape trench-gate architecture whi...
This research focuses on the designing and simulation of normally-on and normallyoff 4H-SiC VJFET. I...
In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with...
Silicon Carbide (SiC) devices have the potential to reduce energy losses in high power applications....
4H-Silicon Carbide (4H-SiC) is a promising semiconductor for the next generation of high power, high...
Power converters utilising SiC MOSFETs have attracted significant interest from the automotive indus...
The 4H-SiC power MOSFET is an excellent candidate for power applications. Major technical difficulti...
A novel SiC trench MOSFET with a P-type half-wrapped shield (HW-TMOS) is proposed and analyzed by th...
In this paper, a novel 1200 V SiC trench MOSFET with a laterally widened P-shield region (LW-MOSFET)...
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate ...
La thèse intitulée "Conception, caractérisation et optimisation d’un transistor à effet de champ hau...
This thesis concentrates on building a power UMOSFET on SiC. The major problem of the Conventional U...
Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect t...