Add to ORKGA novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2-D numerical simulations and experimental fabrication
The-product of the on-resistance by the area of the high-voltage, LDMOS transistor can be reduced by...
[[abstract]]A novel ultrahigh-voltage device with multi-lateral double diffused field ring in reduce...
DC/DC converters to power future CPU cores mandate low-voltage power metal-oxide semiconductor field...
A new Lateral Emitter Switched Thyristor structure (LEST) is proposed and experimentally verified. T...
The conventional high voltage power transistor is a vertical device. That is, one in which the curre...
grantor: University of TorontoThis thesis deals with lateral power MOSFETs which are used ...
Thyristors are usually three-terminal devices that have four layers of alternating p-type and n-type...
The IGBT has become the device of choice in many high-voltage-power electronic applications, by virt...
An integrated power switch structure comprises a lateral MOS transistor and a lateral or a vertical ...
A novel device called self-protected MOS gated thyristor is reported for the first time. This device...
P-channel power MOSFETs are widely used in portable electronics products as the load switch. We repo...
This paper analyses the experimental results of voltage capability (VBR> 120V) and output charact...
DODC converters to power future CPU cores mandate low-voltage power metal-oxide semiconductor field-...
International audienceThis paper analyses the experimental results of voltage capability (VBR > 120 ...
[[abstract]]In this paper, a transient voltage suppressor (TVS) using a native lateral back-to-back ...
The-product of the on-resistance by the area of the high-voltage, LDMOS transistor can be reduced by...
[[abstract]]A novel ultrahigh-voltage device with multi-lateral double diffused field ring in reduce...
DC/DC converters to power future CPU cores mandate low-voltage power metal-oxide semiconductor field...
A new Lateral Emitter Switched Thyristor structure (LEST) is proposed and experimentally verified. T...
The conventional high voltage power transistor is a vertical device. That is, one in which the curre...
grantor: University of TorontoThis thesis deals with lateral power MOSFETs which are used ...
Thyristors are usually three-terminal devices that have four layers of alternating p-type and n-type...
The IGBT has become the device of choice in many high-voltage-power electronic applications, by virt...
An integrated power switch structure comprises a lateral MOS transistor and a lateral or a vertical ...
A novel device called self-protected MOS gated thyristor is reported for the first time. This device...
P-channel power MOSFETs are widely used in portable electronics products as the load switch. We repo...
This paper analyses the experimental results of voltage capability (VBR> 120V) and output charact...
DODC converters to power future CPU cores mandate low-voltage power metal-oxide semiconductor field-...
International audienceThis paper analyses the experimental results of voltage capability (VBR > 120 ...
[[abstract]]In this paper, a transient voltage suppressor (TVS) using a native lateral back-to-back ...
The-product of the on-resistance by the area of the high-voltage, LDMOS transistor can be reduced by...
[[abstract]]A novel ultrahigh-voltage device with multi-lateral double diffused field ring in reduce...
DC/DC converters to power future CPU cores mandate low-voltage power metal-oxide semiconductor field...