Passively mode-locked diode-pumped surface-emitting semiconductor laser
- Hoogland, S.
- Dhanjal, S.
- Tropper, A.C.
- Roberts, J.S.
- Häring, R.
- Paschotta, R.
- Morier-Genoud, F.
- Keller, U.
Publication date
September 2000
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) ISSN
1041-1135 Language
English Citation count (estimate)
114Abstract
A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror structure, and pumped optically by a high-brightness diode laser. The mode-locked laser emits pulses of 22 ps full-width at half maximum duration at 1030 nm, with a repetition rate variable around 4.4 GHz
Add to ORKG