Strain-gradient position mapping of semiconductor quantum dots

COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPESWe introduce a nondestructive method to determine the position of randomly distributed semiconductor quantum dots (QDs) integrated in a solid photonic structure. By setting the structure in an oscillating motion, we generate a large stress gradient across the QDs plane. We then exploit the fact that the QDs emission frequency is highly sensitive to the local material stress to map the position of QDs deeply embedded in a photonic wire antenna with an accuracy ranging from +/- 35 nm down to +/- 1 nm. In the context of fast developing quantum technologies, this technique can be generalized to different photonic nanostructures embedding any stress-sensitive quantum emitters.1181116COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPESCOORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES88887.059630/2014-00The authors wish to thank E. Gautier for the FIB cut and images. Sample fabrication was carried out in the Upstream Nanofabrication Facility (PTA) and CEA LETI MINATEC/DOPT clean rooms. P.-L. de Assis was financially supported by Agence Nationale de la Recherche (Project No. ANR-11-BS10-011) and CAPES Young Talents Fellowship Grant No. 88887.059630/2014-00, and D. Tumanov by a doctoral scholarship from the Rhône-Alpes Region