Analysis of silicon germanium standards for the quantification of SiGe microelectronic devices using AES

Four samples of well-defined silicon-germanium alloys were used as standards for calibration purposes to allow accurate quantification of silicon-germanium-on-insulator (SGOI) microelectronic devices using Auger electron spectroscopy. Narrow Si KLL and the Ge LMM, high resolution Si KL2,3L2,3 and Ge L3M4,5M4,5 together with survey spectra were collected and are presented from each sample. A matrix effect was observed for silicon in germanium and calculated as 0.85 and 0.95 for the Ge77.5Si22.5 and Ge52.4Si47.6 alloys respectively