Formation of Si Nanocrystals for Single Electron Transistors by Ion Beam Mixing and Self-Organization – Modeling and Simulation

The replacement of the conventional field effect transistor (FET) by single electron transistors (SET) would lead to high energy savings and to devices with significantly longer battery life. There are many production approaches, but mostly for specimens in the laboratory. Most of them suffer from the fact that they either only work at cryogenic temperatures, have a low production yield or are not reproducible and each unit works in a unique way. A room temperature (RT) operating SET can be configured by inserting a small (few nm diameters) Si-Nanocrystal (NC) into a thin (