Add to ORKGPt/TiO2/Pt/Ti memristive devices were electrically formed to either the ON or OFF state using voltages of the same polarity but with different amplitudes. The forming step dictated the subsequent switching behaviour. A qualitative model based on the creation and migration of oxygen vacancies was proposed to explain the experimental results
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
We suggest a possible mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell in te...
The paper presents the resistive switching of electroforming-free Ti/anodic-TiO2/Cu memristors. Anod...
Pt/TiO2/Pt/Ti memristive devices were electrically formed to either the ON or OFF state using voltag...
Abnormal bipolar-like resistive changes are reported in TiO(2) thin films sandwiched between Pt top ...
Combining delamination technique with conductive AFM, we have been able to reveal spatially resolved...
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memo...
We report on the electroforming in resistively switching nanocrosspoint devices made of a reactively...
Recently, the resistive switching behavior in TiO$_{2}$ has drawn attention due to its application t...
We probe the resistive switching response of Au/TiO2/Cu junctions, on samples initialized using both...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
Metal–insulator–metal (MIM) structures based on titanium dioxide have demonstrated reversible and no...
<p>Resistance switching devices based on transition metal oxides have generated significant research...
Flexible solution-processed memristors show different behaviour dependent on the choice of electrode...
Bipolar resistive switching (BRS) as well as unipolar resistive switching (URS) behaviors in Pt/27 n...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
We suggest a possible mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell in te...
The paper presents the resistive switching of electroforming-free Ti/anodic-TiO2/Cu memristors. Anod...
Pt/TiO2/Pt/Ti memristive devices were electrically formed to either the ON or OFF state using voltag...
Abnormal bipolar-like resistive changes are reported in TiO(2) thin films sandwiched between Pt top ...
Combining delamination technique with conductive AFM, we have been able to reveal spatially resolved...
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memo...
We report on the electroforming in resistively switching nanocrosspoint devices made of a reactively...
Recently, the resistive switching behavior in TiO$_{2}$ has drawn attention due to its application t...
We probe the resistive switching response of Au/TiO2/Cu junctions, on samples initialized using both...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
Metal–insulator–metal (MIM) structures based on titanium dioxide have demonstrated reversible and no...
<p>Resistance switching devices based on transition metal oxides have generated significant research...
Flexible solution-processed memristors show different behaviour dependent on the choice of electrode...
Bipolar resistive switching (BRS) as well as unipolar resistive switching (URS) behaviors in Pt/27 n...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
We suggest a possible mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell in te...
The paper presents the resistive switching of electroforming-free Ti/anodic-TiO2/Cu memristors. Anod...