Add to ORKGThe present paper is about the modeling of surface potential and threshold voltage of Fully Depleted Silicon on Insulator MOSFET. The surface potential is calculated by solving the 3D Poisson’s equation analytically. The appropriate boundary conditions are used in calculations. The effect of narrow channel width and short channel length for suppression of SCE is analyzed. The narrow channel width effect in the threshold voltage is analyzed for thin film Fully Depleted SOI MOSFET
Abstract−A new two-dimensional analytical model for the potential distribution and drain-induced bar...
In this paper, we have presented modeling of drain current for single material surrounded gate SOI M...
AbstractThis paper is about the analysis of width effect in a narrow channel fully depleted SOI MOSF...
The present paper is about the modeling of surface potential and threshold voltage of Fully Depleted...
In this Paper, comparison of three Dimensional characteristics between partially and fully depleted ...
A threshold voltage model for small geometry fully depleted Silicon-On-Insulator (SOI MOSFET), based...
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is the one of the most important and wide...
Abstract—For a mesa-isolated small geometry SOI MOSFET, the potentials in the silicon film, front, b...
Design consideration of a fully depleted SOI (Silicon-On-Insulator) MOSFET device by three dimension...
Design consideration of a fully depleted SOI (Silicon-On-Insulator) MOSFET device by three dimension...
A new analytical model is presented for the threshold voltage of fully depleted silicon-on-insulator...
During last few decades, the Silicon-On-Insulator (SOI) technology has been identified as a possible...
Abstract-The exact solution of the 2D Poisson’s equation for the fully depleted SO1 MOSFET’s is deri...
To determine electrostatic potentials in silicon channel of undoped DG SOI MOSFET devices, a graphic...
To determine electrostatic potentials in silicon channel of undoped DG SOI MOSFET devices, a graphic...
Abstract−A new two-dimensional analytical model for the potential distribution and drain-induced bar...
In this paper, we have presented modeling of drain current for single material surrounded gate SOI M...
AbstractThis paper is about the analysis of width effect in a narrow channel fully depleted SOI MOSF...
The present paper is about the modeling of surface potential and threshold voltage of Fully Depleted...
In this Paper, comparison of three Dimensional characteristics between partially and fully depleted ...
A threshold voltage model for small geometry fully depleted Silicon-On-Insulator (SOI MOSFET), based...
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is the one of the most important and wide...
Abstract—For a mesa-isolated small geometry SOI MOSFET, the potentials in the silicon film, front, b...
Design consideration of a fully depleted SOI (Silicon-On-Insulator) MOSFET device by three dimension...
Design consideration of a fully depleted SOI (Silicon-On-Insulator) MOSFET device by three dimension...
A new analytical model is presented for the threshold voltage of fully depleted silicon-on-insulator...
During last few decades, the Silicon-On-Insulator (SOI) technology has been identified as a possible...
Abstract-The exact solution of the 2D Poisson’s equation for the fully depleted SO1 MOSFET’s is deri...
To determine electrostatic potentials in silicon channel of undoped DG SOI MOSFET devices, a graphic...
To determine electrostatic potentials in silicon channel of undoped DG SOI MOSFET devices, a graphic...
Abstract−A new two-dimensional analytical model for the potential distribution and drain-induced bar...
In this paper, we have presented modeling of drain current for single material surrounded gate SOI M...
AbstractThis paper is about the analysis of width effect in a narrow channel fully depleted SOI MOSF...