Results of measurement of resistivity of mesoporous silicon formed on n-type substrates in a wide temperature range are presented. Measurements show that at low temperatures there is a growth of resistance of four orders of magnitude compared to that at room temperature which occurs in a relatively narrow temperature range. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2063
The resistivity of (100) -oriented mesoporous silicon has been studied using two different electrode...
Intrinsic resistivity of any semiconductor silicon layer strongly depends on dopants and impurities ...
The resistivity of (100) -oriented mesoporous silicon has been studied using two different electrode...
Results of measurement of resistivity of mesoporous silicon formed on n-type substrates in a wide te...
A model for the temperature dependence of electrical conduction in a porous silicon (PS) layer is in...
Copyright @ 1998 American Institute of Physics.The current transport mechanism through porous silico...
A systematic study has been made of the electrical conduction processes through electrically etched ...
In the present paper we have studied the peculiarities of carrier transport properties of nanohetero...
Since the Volker Lehmann’s paper “Resistivity of Porous Silicon: a surface effect” published in 19...
Alternating current (AC) impedance measurements have been performed on 10−15 thick porous silicon l...
International audienceABSTRACT: In this paper, the structural, optical and thermal properties of n-t...
International audienceABSTRACT: In this paper, the structural, optical and thermal properties of n-t...
International audienceABSTRACT: In this paper, the structural, optical and thermal properties of n-t...
Since the Volker Lehmann’s paper “Resistivity of Porous Silicon: a surface effect” published in 19...
The current transport mechanism through porous silicon (PS) films fabricated from 8 to 12 Omega cm p...
The resistivity of (100) -oriented mesoporous silicon has been studied using two different electrode...
Intrinsic resistivity of any semiconductor silicon layer strongly depends on dopants and impurities ...
The resistivity of (100) -oriented mesoporous silicon has been studied using two different electrode...
Results of measurement of resistivity of mesoporous silicon formed on n-type substrates in a wide te...
A model for the temperature dependence of electrical conduction in a porous silicon (PS) layer is in...
Copyright @ 1998 American Institute of Physics.The current transport mechanism through porous silico...
A systematic study has been made of the electrical conduction processes through electrically etched ...
In the present paper we have studied the peculiarities of carrier transport properties of nanohetero...
Since the Volker Lehmann’s paper “Resistivity of Porous Silicon: a surface effect” published in 19...
Alternating current (AC) impedance measurements have been performed on 10−15 thick porous silicon l...
International audienceABSTRACT: In this paper, the structural, optical and thermal properties of n-t...
International audienceABSTRACT: In this paper, the structural, optical and thermal properties of n-t...
International audienceABSTRACT: In this paper, the structural, optical and thermal properties of n-t...
Since the Volker Lehmann’s paper “Resistivity of Porous Silicon: a surface effect” published in 19...
The current transport mechanism through porous silicon (PS) films fabricated from 8 to 12 Omega cm p...
The resistivity of (100) -oriented mesoporous silicon has been studied using two different electrode...
Intrinsic resistivity of any semiconductor silicon layer strongly depends on dopants and impurities ...
The resistivity of (100) -oriented mesoporous silicon has been studied using two different electrode...