Structural Peculiarities of A3B5 Nanocrystals Created in Si by Ion-Beam Synthesis

We reported the structure peculiarities of nanocrystals formed in Si by means of high-fluence implantation at 25 and 500 °С followed by rapid thermal annealing (RTA). The structure of implanted samples has been investigated by means of transmission electron microscopy (TEM). The crystalline nature of the precipitates is proved by the Moiré fringe patterns presence in the TEM images. The Moiré fringe distance (Moiré period) is equal of 1.8 nm for small precipitates. This experimental value coincides with the calculated one for crystalline InAs. It is noted a Moiré period increasing in the case of large precipitates. We suppose that this feature is a result of surplus As or In atoms embedded in precipitates. One can see an interesting effect – “glowng” of nanocrystal/Si interfaces at the dark-field images of implanted and annealed samples. We ascribe this effect to a presence of misfit dislocation networks at the InAs/Si interfaces generated as a result of strain relaxation in highly mismatched InAs/Si system. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3543