Simultaneous extraction of GaAs MESFET channel and gate diode parameters and its application to circuit simulation

The authors have developed a method for extracting the channel and gate diode parameters for a GaAs MESFET simultaneously from a single set of measurement data. The method has been applied in comparing nonirradiated and irradiated devices and could be useful in predicting the maximum integration level of GaAs circuits designed to operate under harsh conditions, like radiation. It is especially suitable for digital circuit applications based on GaAs E/D- (enhancement/depletion) and D-MESFET technologies, because of the limited number of MESFETs with different geometries. The procedure has been applied to the extraction of model parameters for gamma- and neutron-irradiated MESFETs, and the results have been compared, used circuit simulation