Measurements were made of conductance noise of a-Si:H and a-Si 1-xGex:H in two different geometries: one where the current flow is transverse to the surface and the other where it is longitudinal to the surface. Because of the large change in sample resistance between the two geometries, it was not possible to measure both geometries at the same temperature. For both geometries, alloyinzg with up to 40% Ge reduces the noise magnitude by several orders of magnitude over that found in a-Si:H. The decrease is incompatible with several popular noise models. Extrapolating the temperature trends for each geometry shows that it is possible that the noise observed in the transverse samples has the same origin as the higher frequency part of the dou...
Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystalline silicon (...
Abstract In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inho...
Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to ...
We report measurements of conductance noise of a-Si1-XGeX:H in two different geometries; one where t...
Conductance fluctuations in four samples of undoped intrinsic hydrogenated amorphous silicon (a-Si:H...
We report coplanar conductance fluctuations of device quality, undoped hydrogenated amorphous silico...
We present measurements of conductance noise in undoped a-Si:H and a-SiGe: H thin films in both a tr...
We measured the spectrum of conductance fluctuations in n-type, p-type, and undoped hydrogenated amo...
Coplanar conductance fluctuations in a range of device quality undoped hydrogenated amorphous silico...
University of Minnesota Ph.D. dissertation. August 2020. Major: Physics. Advisor: James Kakalios. 1 ...
Recently, there has been much uncertainty and controversy concerning various aspects of the behavio...
Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenat...
We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si:P and Ge:P δ...
We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si: P and Ge: P del...
Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystalline silicon (...
Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystalline silicon (...
Abstract In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inho...
Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to ...
We report measurements of conductance noise of a-Si1-XGeX:H in two different geometries; one where t...
Conductance fluctuations in four samples of undoped intrinsic hydrogenated amorphous silicon (a-Si:H...
We report coplanar conductance fluctuations of device quality, undoped hydrogenated amorphous silico...
We present measurements of conductance noise in undoped a-Si:H and a-SiGe: H thin films in both a tr...
We measured the spectrum of conductance fluctuations in n-type, p-type, and undoped hydrogenated amo...
Coplanar conductance fluctuations in a range of device quality undoped hydrogenated amorphous silico...
University of Minnesota Ph.D. dissertation. August 2020. Major: Physics. Advisor: James Kakalios. 1 ...
Recently, there has been much uncertainty and controversy concerning various aspects of the behavio...
Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenat...
We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si:P and Ge:P δ...
We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si: P and Ge: P del...
Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystalline silicon (...
Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystalline silicon (...
Abstract In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inho...
Polycrystalline layers of Si0.7Ge0.3 were deposited using low pressure chemical vapor deposition to ...