Study on the Perturbation and its Application to the Cylindrical Cavity

本文分析圆柱 TE0 1 1 模端盖对称隙缝特性。在隙缝辐射较小的条件下 ,提出适于损耗小 ,厚度薄 (1 mm左右 )的片状材料腔外微扰的近似计算方法 ,测得聚四氟乙烯、聚氯乙烯、纯陶瓷片等复介电常数与准确值相当吻合的结果。测得相同厚度的片状半导体材料电阻率 (≥ 2 0 Ω·cm) ,与 1 /QL 有线性关系 ,与提出的近似方法所预期结果一致。理论分析和实验表明 ,应用圆柱TE0 1 1 模端盖对称隙缝可实现无接触、高精度、多功能测量片状材料的参数 ,且预期可用于二维测量The characteristics of symmetric slots on the t op-cover of TE 011 -mode cylindrical cavity are analyzed in this paper.The approximate calculating method is proposed for the low loss and thin flake mate rial perturbation outside of the cavity.The measured complex permittivities of t eflon,polyvinyl chloride (PVC) ,pure ceramic flake are in good agreements with t he standard data.The linear relation between 1/ Q L of the cavity and the co nductivity of the semiconductor slice material with the same thickness agrees to the anticipation of the approximate calculating method.The theoretical analysis and experimental results show that contactless,high precision,multifunction para meters measurement of flake material are realized by using the slots of port-co -ver.The two-dimensional measurements are also realized by this method.福建省自然科学基金资助项