Research and fabrication of silicon based metal-semiconductor-metal photodetector with U-shape trench interdigitated electrodes

为了提高硅MSM结构光电探测器的光电响应度,制备了U型凹槽电极结构的探测器。5 V偏压下,对650 nm波长入射光的绝对光电响应度测试表明,凹槽电极结构的探测器最大光电响应度值为0.486 A/W,比同样尺寸的平版结构光电探测器提高了约6倍。文中也对比了具有抗反射膜和不具有抗反射膜的器件相对响应光谱的差别,并且比较分析了叉指间隙分别为5μm和10μm器件光电响应的不同。The responsivity of silicon based metal-semiconductor-metal(MSM) photodetector(Si-MSM-PD) was improved by placing the planar interdigitated electrodes with U-shape trench interdigitated electrodes.The performance test indicates that the responsivity of Si-MSM-PD with U-shape trench interdigitated electrodes is 0.486 A/W for 650 nm laser at 5 V applied voltage.This responsivity is about 6 times larger than that of Si-MSM-PD with planar interdigitated electrodes whose responsivity is just 0.084 A/W.Besides,the performance of Si-MSM-PDs with different intergitated space of 5 μm and 10 μm was compared.国家自然科学基金资助项目(60576001,60336010,60676027);; 福建省自然科学基金资助项目(A0410008