Development of Technology of Multicharged Ion Implantation of GaAs for Submicron Structures of Large-scale Integrated Circuits

The paper describes the development of technology of multicharged ion implantation for GaAs. This technology is essential to creating high-performance VLSI structures. The main advantage of ion implantation of GaAs is optimizing the doping profile for the active impact on the characteristics of Schottky field-effect transistors, namely reducing the surface influence on the stability of Schottky transistors and enhancing their performance by reducing the resistance of the source and drain regions. The first section of this paper presents the results of developing the GaAs-based structures with steep Schottky barrier. Next, the technology of multicharged ion implantation of P and B used to create doped pockets and security zones was described. This technology excludes thermal annealing and allows to create pockets and security zones simultaneously, which decreases the number of operations to ten and reduces the distance between the n and p transistors to 5.6 microns. Further, the characteristics of GaAs-based p+-n junctions were given, which allow to form complex structures with minimal defects, which in turn allows to create high-performance GaAs-based C-MOS transistors. Also, the paper considers the use of GaAs technology in solar cells, in which the charge carrier collection rate is increased by reducing the generation-recombination processes in the p-n junction, which greatly increases the efficiency of solar cells compared to monosilicon