3D Trench Detectors for Charged Particle Tracking and Photon Science Applications

Silicon tracking detectors are frequently used in particle collider experiments, as they can provide excellent spatial precision with little material in order to cause minimal track disruption. Due to a progressive increase in collider luminosities, a common trend in these experiments is the need for higher levels of radiation damage resistance. One proposed class of designs for pixel trackers in high luminosity colliders is the Silicon 3D trench detector. The same design can be scaled up for photon science applications. The work discussed in this dissertation was performed as part of a collaboration between BNL, NYU, CNM and SUNY Stony Brook. The central aim of the work presented here was to evaluate the manufactured 3D trench detector prototypes and study their behavior in detail by performing a series of experimental measurements and TCAD simulations. An experiment to measure the detector response to an Americium radioactive source was designed and used to study the noise level and charge collection efficiency of detector prototypes. An experimental system which measured the detector response to an infrared laser with computer controlled precision positioning was developed. This system was used to obtain laser pulse response maps of detectors, which in turn were utilized to investigate the dependence of charge collection efficiency of detectors on position, collection time and bias voltage. The same mapping technique was also used to study the change in irradiated detector response. Detector response was simulated using the Silvaco TCAD Suite. These simulations were used to study depletion in large photon detectors and charge collection in response to laser hits. Approximate simulations of radiation damage were also performed to investigate the behavior of irradiated detectors. Leakage current and capacitance simulations before and after irradiation were also performed and compared to the experimental measurements. While significant variations in detector response between different prototypes were observed during the experiments, simulation results are still capable of explaining the general properties of the detectors. The combination of the simulation and the experimental results provides an understanding of the signal generation process in these detectors. One observed problem is the large bias currents due to manufacturing surface defects. A double-sided version of the trench detector is proposed to mitigate this problem. Electric fields, depletion region shape and formation, bias voltage and transient current response of these detectors are simulated and compared with those of the standard trench detectors. Computer simulations show that the double-sided detectors also have some performance advantages over the original designs including larger more uniform spatial charge collection efficiency and higher radiation damage resistance. These simulation results and the general insensitivity of the proposed detectors to surface defects make the double-sided detectors worthy of further study