Simulation study of the transport and avalanche characteristics in SiC Avalanche Photodiodes

The Monte Carlo (MC) simulation of electron and hole transport properties in 4H- and 6H-SiC for a wide electric field region are presented. This MC model includes two non-parabolic conduction bands and two non-parabolic valence bands. Based on the material parameters, the electron and hole scattering rates, including polar optical phonon scattering, optical phonon scattering and acoustic phonon scattering are evaluated. The electron and hole drift velocity, energy and free flight time are simulated as a function of applied electric field ranging from 10 kV/cm to 1 MV/cm in room temperature (27 °C) at an impurity concentration of 1×10 18 cm-3. The simulated electron and hole drift velocity with electric field dependency for both materials are in good agreement with experimental results from other researchers found in literature. A complete set of energy band and phonon scattering parameters for electron and hole for both materials are deduced