We have investigated the band structure at the Gamma point of the three-dimensional topological insulator Bi2Se3 using magnetospectroscopy over a wide range of energies (0.55-2.2 eV) and in ultrahigh magnetic fields up to 150 T. At high energies (E > 0.6 eV) the parabolic approximation for the massive Dirac fermions breaks down and the Landau-level dispersion becomes nonlinear. At higher energies around 0.99 and 1.6 eV, additional strong absorptions are observed with temperature and magnetic field dependences which suggest that they originate from higher band gaps. Spin-orbit splittings for the further lying conduction and valence bands are found to be 0.196 and 0.264 eV
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by break...
The outstanding problem in topological insulators is the bulk metallicity underneath topologically o...
The outstanding problem in topological insulators is the bulk metallicity underneath topologically o...
We have investigated the band structure at the Γ point of the three-dimensional (3D) topological ins...
Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topolog...
We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via...
Topological insulators have attracted intensive research interest in the field of material research ...
We report the electrical (angular magnetoresistance and Hall), thermal (heat capacity) and spectrosc...
Despite intensive investigations of Bi2Se3 in past few years, the size and nature of the bulk energy...
Despite intensive investigations of Bi2Se3 in past few years, the size and nature of the bulk energy...
Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. ...
Using angle-resolved photoelectron spectroscopy and ab initio GW calculations, we unambiguously show...
Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. ...
International audienceShubnikov–de Haas oscillations were studied under high magnetic field in Bi2Se...
The response of thin films of Bi$_2$Se$_3$ to a strong perpendicular magnetic field is investigated ...
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by break...
The outstanding problem in topological insulators is the bulk metallicity underneath topologically o...
The outstanding problem in topological insulators is the bulk metallicity underneath topologically o...
We have investigated the band structure at the Γ point of the three-dimensional (3D) topological ins...
Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topolog...
We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via...
Topological insulators have attracted intensive research interest in the field of material research ...
We report the electrical (angular magnetoresistance and Hall), thermal (heat capacity) and spectrosc...
Despite intensive investigations of Bi2Se3 in past few years, the size and nature of the bulk energy...
Despite intensive investigations of Bi2Se3 in past few years, the size and nature of the bulk energy...
Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. ...
Using angle-resolved photoelectron spectroscopy and ab initio GW calculations, we unambiguously show...
Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. ...
International audienceShubnikov–de Haas oscillations were studied under high magnetic field in Bi2Se...
The response of thin films of Bi$_2$Se$_3$ to a strong perpendicular magnetic field is investigated ...
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by break...
The outstanding problem in topological insulators is the bulk metallicity underneath topologically o...
The outstanding problem in topological insulators is the bulk metallicity underneath topologically o...