Dark Count Rate Distribution in Neutron-Irradiated CMOS SPADs
- Ratti L.
- Brogi P.
- Collazuol G.
- Dalla Betta G. -F.
- Ficorella A.
- Marrocchesi P. S.
- Pancheri L.
- Vacchi C.
Publication date
January 2019
DOI Publisher
Institute of Electrical and Electronics Engineers Inc.Abstract
Dark count rate (DCR) increase in CMOS single-photon avalanche diodes (SPADs) exposed to a non monochromatic neutron source is modeled, taking into account the source spectrum and the geometry of the device under test. Experimental results from the characterization of SPADs fabricated in a 150-nm technology and irradiated with 1-MeV neutron equivalent fluences up to 10 11 cm 2 are found to be in good agreement with the theoretically calculated distribution of the non-ionizing energy deposited in the device substrate
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