Bi2Te3 nanowires with diameters ranging from 25 to 270 nm, ultra-high aspect ratio, and uniform growth front were fabricated by electrodeposition, pulsing between zero current density during the off time and constant potential during the on time (pulsed-current-voltage method, p-IV). The use of zero current density during the off time is to ensure no electrodeposition is carried out and the system is totally relaxed. By this procedure, stoichiometric nanowires oriented perpendicular to the c-axis is obtained for the different diameters of porous alumina templates. In addition, the samples show a uniform growth front with ultra-high aspect ratio single crystal nanowires. The high degree of crystallinity was verified by transmission electron ...
Resumen del trabajo presentado en la Virtual Conference on Thermoelectrics, celebrada virtualmente p...
Arrays of Bi1-xSbx nanowire with various compositions (0 <= x <= 1) are grown in etched ion-track me...
Arrays of Bi1-xSbx nanowire with various compositions (0 <= x <= 1) are grown in etched ion-track me...
Bi2Te3 nanowires with diameters ranging from 25 to 270 nm, ultra-high aspect ratio, and uniform grow...
Thermoelectric material Bi2Te3 nanowire arrays have been successfully prepared by pulsed electrochem...
International audienceArrays of thermoelectric bismuth telluride (Bi2Te3) nanowires were grown into ...
Self-standing Bi2Te3 networks of interconnected nanowires were fabricated in three-dimensional porou...
Bismuth telluride (Bi2Te3) nanowire arrays with a uniform length and controlled composition were ele...
Trabajo presentado en el International Conference on Thermoelectric Materials (Cursos de verano UPV/...
Arrays of nanowires and nanotubes of bismuth-tellurium (Bi-Te) were fabricated by electrodeposition ...
Bi2Te2.7Se0.3 nanowire arrays have been fabricated by electrodeposition into the pores of an anodic ...
We report the fabrication of Bi2Te3 nanowires with diameters as small as 15 nm, which is comparable ...
We report the fabrication of Bi2Te3 nanowires with diameters as small as 15 nm, which is comparable ...
Promising research fields associated to solid state physics, such as thermoelectrics and spintronics,...
Polycrystalline Bi2Te3 nanowires are electrochemically grown in ion track-etched polycarbonate membr...
Resumen del trabajo presentado en la Virtual Conference on Thermoelectrics, celebrada virtualmente p...
Arrays of Bi1-xSbx nanowire with various compositions (0 <= x <= 1) are grown in etched ion-track me...
Arrays of Bi1-xSbx nanowire with various compositions (0 <= x <= 1) are grown in etched ion-track me...
Bi2Te3 nanowires with diameters ranging from 25 to 270 nm, ultra-high aspect ratio, and uniform grow...
Thermoelectric material Bi2Te3 nanowire arrays have been successfully prepared by pulsed electrochem...
International audienceArrays of thermoelectric bismuth telluride (Bi2Te3) nanowires were grown into ...
Self-standing Bi2Te3 networks of interconnected nanowires were fabricated in three-dimensional porou...
Bismuth telluride (Bi2Te3) nanowire arrays with a uniform length and controlled composition were ele...
Trabajo presentado en el International Conference on Thermoelectric Materials (Cursos de verano UPV/...
Arrays of nanowires and nanotubes of bismuth-tellurium (Bi-Te) were fabricated by electrodeposition ...
Bi2Te2.7Se0.3 nanowire arrays have been fabricated by electrodeposition into the pores of an anodic ...
We report the fabrication of Bi2Te3 nanowires with diameters as small as 15 nm, which is comparable ...
We report the fabrication of Bi2Te3 nanowires with diameters as small as 15 nm, which is comparable ...
Promising research fields associated to solid state physics, such as thermoelectrics and spintronics,...
Polycrystalline Bi2Te3 nanowires are electrochemically grown in ion track-etched polycarbonate membr...
Resumen del trabajo presentado en la Virtual Conference on Thermoelectrics, celebrada virtualmente p...
Arrays of Bi1-xSbx nanowire with various compositions (0 <= x <= 1) are grown in etched ion-track me...
Arrays of Bi1-xSbx nanowire with various compositions (0 <= x <= 1) are grown in etched ion-track me...