Oxygen vacancies play crucial roles in determining the physical properties of metal oxides, representing important building blocks in many scientific and technological fields due to their unique chemical, physical, and electronic properties. However, oxygen vacancies are often invisible because of their dilute concentrations. Therefore, characterizing and quantifying their presence is of utmost importance for understanding and realizing functional metal oxide devices. This, however, is oftentimes a non-trivial task. In this Perspective paper, we discuss the relevant regimes of concentrations and associated phenomena arising from oxygen vacancies. We then focus on experimental techniques available for observing oxygen vacancies at widely dif...
Oxygen vacancies in metal oxides are known to determine their chemistry and physics. The properties ...
Tuning surface oxygen vacancies is important for oxide catalysts. Doping elements with different che...
Several applications of semiconductors depend critically on their doping level; in particular, chemo...
Oxidation reactions on semiconducting metal oxide (SMOs) surfaces have been extensively worked on in...
Energy storage devices (ESD) are getting significant attention regarding their ability to reduce fos...
Oxygen vacancies () play a critical role as defects in complex oxides in establishing functionality ...
High precision electron probe microanalysis (EPMA) has been used to measure the correlation of oxyge...
Despite advantages highlighted by MOX-based gas sensors, these devices still show drawbacks in their...
The technological usefulness of a solid often depends upon the types and concentrations of the defec...
We investigate effects of doping on formation energy and concentration of oxygen vacancies at a meta...
The source of n -type conductivity in undoped transparent conducting oxides has been a topic of deba...
Oxygen vacancies often determine the electronic structure of metal oxides, but existing techniques c...
High precision electron probe microanalysis (EPMA) has been used to measure the correlation of oxyge...
The use of computer simulations has become almost essential for prediction and interpretation of dev...
The source of n-type conductivity in undoped transparent conducting oxides has been a topic of debat...
Oxygen vacancies in metal oxides are known to determine their chemistry and physics. The properties ...
Tuning surface oxygen vacancies is important for oxide catalysts. Doping elements with different che...
Several applications of semiconductors depend critically on their doping level; in particular, chemo...
Oxidation reactions on semiconducting metal oxide (SMOs) surfaces have been extensively worked on in...
Energy storage devices (ESD) are getting significant attention regarding their ability to reduce fos...
Oxygen vacancies () play a critical role as defects in complex oxides in establishing functionality ...
High precision electron probe microanalysis (EPMA) has been used to measure the correlation of oxyge...
Despite advantages highlighted by MOX-based gas sensors, these devices still show drawbacks in their...
The technological usefulness of a solid often depends upon the types and concentrations of the defec...
We investigate effects of doping on formation energy and concentration of oxygen vacancies at a meta...
The source of n -type conductivity in undoped transparent conducting oxides has been a topic of deba...
Oxygen vacancies often determine the electronic structure of metal oxides, but existing techniques c...
High precision electron probe microanalysis (EPMA) has been used to measure the correlation of oxyge...
The use of computer simulations has become almost essential for prediction and interpretation of dev...
The source of n-type conductivity in undoped transparent conducting oxides has been a topic of debat...
Oxygen vacancies in metal oxides are known to determine their chemistry and physics. The properties ...
Tuning surface oxygen vacancies is important for oxide catalysts. Doping elements with different che...
Several applications of semiconductors depend critically on their doping level; in particular, chemo...