High-speed germanium pin photodiodes integrated on silicon-on-insulator nanophotonic waveguides
- Benedikovic, D.
- Virot, L.
- Aubin, G
- Hartmann, J.-M
- Szelag, B.
- Amar, F
- Le Roux, X
- Alonso-Ramos, C
- Crozat, P
- Marris-Morini, D
- Cassan, E
- Baudot, C
- Boeuf, F
- Fédéli, J.-M
- Kopp, C
- Vivien, L
Publication date
August 2019
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceHetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of-13.9,-12.7, and-11.3 dBm
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