The aim of this work was to investigate the luminescent mechanism in pure CdS single crystals and to attempt to obtain unambiguous evidence in favour of one of the two models proposed in the literature (the Schon-Klasens or the Lambe-Klick model). Experiments have been carried out on undoped specimens obtained from three different sources and an attempt has been made to correlate transport, electrical, optical and luminescent properties measured on the same specimens. The results of electron transport measurements, based on drift mobility techniques, on a number of specimens indicated that the drifting electrons interact predominately with either a shallow centre lying at about 0.03ev or with a deeper level at 0.l6ev below the conduction ba...
A thorough treatment of the luminescent mechanisms in high resistivity semiconductors (up to 10 12 o...
This thesis describes the synthesis and spectroscopy of CdSe and CdTe semiconductor quantum dots (QD...
CdS and CdSe are often used in optoelectronic devices whose effectiveness may be dictated by defects...
This thesis describes some properties of the luminescence from single crystals and evaporated thin f...
In high-purity cadmium sulfide crystals,, at low temperatures and high excitation intensities, emiss...
The luminescence spectra of CdS single crystals have been widely investigated. However, many transit...
Dynamics of energy transfer among bound-excitons and donor—acceptor pairs (DAPs) in CdS have been in...
Abstract. The impurity photoluminescence of cadmium sulphide crystals is studied. The luminescence i...
\u3cp\u3eThe temperature dependence of the luminescence properties of nanocrystalline CdS/Mn\u3csup\...
Photoluminescence (PL) measurements have been performed on both single crystal and polycrystalline C...
Photoluminescence (PL) measurements have been performed on both single crystal and polycrystalline C...
Photoluminescence (PL) measurements have been performed on both single crystal and polycrystalline C...
The dependence of excitation frequency of photoluminescence spectral shape of CdS at high excitation...
Fast pulse methods have been used to study the drift mobility of both electrons and holes in pure Cd...
A thorough treatment of the luminescent mechanisms in high resistivity semiconductors (up to 1012 oh...
A thorough treatment of the luminescent mechanisms in high resistivity semiconductors (up to 10 12 o...
This thesis describes the synthesis and spectroscopy of CdSe and CdTe semiconductor quantum dots (QD...
CdS and CdSe are often used in optoelectronic devices whose effectiveness may be dictated by defects...
This thesis describes some properties of the luminescence from single crystals and evaporated thin f...
In high-purity cadmium sulfide crystals,, at low temperatures and high excitation intensities, emiss...
The luminescence spectra of CdS single crystals have been widely investigated. However, many transit...
Dynamics of energy transfer among bound-excitons and donor—acceptor pairs (DAPs) in CdS have been in...
Abstract. The impurity photoluminescence of cadmium sulphide crystals is studied. The luminescence i...
\u3cp\u3eThe temperature dependence of the luminescence properties of nanocrystalline CdS/Mn\u3csup\...
Photoluminescence (PL) measurements have been performed on both single crystal and polycrystalline C...
Photoluminescence (PL) measurements have been performed on both single crystal and polycrystalline C...
Photoluminescence (PL) measurements have been performed on both single crystal and polycrystalline C...
The dependence of excitation frequency of photoluminescence spectral shape of CdS at high excitation...
Fast pulse methods have been used to study the drift mobility of both electrons and holes in pure Cd...
A thorough treatment of the luminescent mechanisms in high resistivity semiconductors (up to 1012 oh...
A thorough treatment of the luminescent mechanisms in high resistivity semiconductors (up to 10 12 o...
This thesis describes the synthesis and spectroscopy of CdSe and CdTe semiconductor quantum dots (QD...
CdS and CdSe are often used in optoelectronic devices whose effectiveness may be dictated by defects...