In this research, an AlGaAs film was deposited on a microscope slide by means of the thermionic vacuum arc (TVA) technique which is a novel plasma production technique. AlGaAs structures were grown by this deposition technique for the first time and this process occurred in a very short period of time. In order to characterize the produced film, nano-structural, nano-mechanical, optical, and surface properties were determined by field emission scanning electron microscope (FESEM), atomic force microscope (AFM), X-ray diffractometer (XRD) and interferometer. According to the results of the measurements, the mean thickness value of the produced film was obtained as 1.8 ?m. The band gap value was determined as 2eV from the Kubelka-Munk plot. T...
Thermionic Vacuum Arc method (TVA) was used for the first time to prepare SiC thin films. This metho...
The aim of the present work is to achieve the controlled synthesis of Ti and Mg thin films, with com...
In this paper, we introduced a new different thin film deposition method for heavily carbon doped Ga...
A 80 nm 2 at% Co-doped GaAs thin film was deposited on a glass substrate under a high vacuum conditi...
The Thermionic Vacuum Arc (TVA) discharge is an original technology for thin film deposition in high...
The aim of this research is to investigate the optical and morphological properties of the InGaN thi...
Gallium nitride (GaN) is an attractive material with a wide-direct band gap (3.4 eV) and is one of t...
9th International Physics Conference of the Balkan Physical Union, BPU 2015Cobalt doped GaAs thin fi...
The thermionic vacuum arc (TVA) is a new technique for the deposition of thin metallic lms. Copper d...
Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technol...
9th International Physics Conference of the Balkan Physical Union, BPU 2015In this study, AlGaN acou...
The optimisation of the specular reflectance of solar collectors is a key parameter to increase the ...
In this study, GaN/InGaN semiconductor films were deposited on glass substrate using thermionic vacu...
Las películas de AlGaAs fueron depositadas por pulverización catódica asistida por campo magnético s...
Funding Information: This work was carried out within the MECHALD project funded by Business Finland...
Thermionic Vacuum Arc method (TVA) was used for the first time to prepare SiC thin films. This metho...
The aim of the present work is to achieve the controlled synthesis of Ti and Mg thin films, with com...
In this paper, we introduced a new different thin film deposition method for heavily carbon doped Ga...
A 80 nm 2 at% Co-doped GaAs thin film was deposited on a glass substrate under a high vacuum conditi...
The Thermionic Vacuum Arc (TVA) discharge is an original technology for thin film deposition in high...
The aim of this research is to investigate the optical and morphological properties of the InGaN thi...
Gallium nitride (GaN) is an attractive material with a wide-direct band gap (3.4 eV) and is one of t...
9th International Physics Conference of the Balkan Physical Union, BPU 2015Cobalt doped GaAs thin fi...
The thermionic vacuum arc (TVA) is a new technique for the deposition of thin metallic lms. Copper d...
Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technol...
9th International Physics Conference of the Balkan Physical Union, BPU 2015In this study, AlGaN acou...
The optimisation of the specular reflectance of solar collectors is a key parameter to increase the ...
In this study, GaN/InGaN semiconductor films were deposited on glass substrate using thermionic vacu...
Las películas de AlGaAs fueron depositadas por pulverización catódica asistida por campo magnético s...
Funding Information: This work was carried out within the MECHALD project funded by Business Finland...
Thermionic Vacuum Arc method (TVA) was used for the first time to prepare SiC thin films. This metho...
The aim of the present work is to achieve the controlled synthesis of Ti and Mg thin films, with com...
In this paper, we introduced a new different thin film deposition method for heavily carbon doped Ga...