Research on the Characteristics of Silicon MOS‐Like Light‐ Emitting Structure by Utilizing the Technology of Field‐Induced Optical Radiation Mechanisms

As a well‐known core material, silicon is becoming one of the most promising materials of photonic integration field. The chapter provides the research of integrated silicon MOS‐like light‐emitting structure utilizing the technology of field‐induced optical radiation mechanisms. The silicon light‐emitting device (Si‐LED) plays an important role in realizing the on‐chip optical interconnects, but Si‐LED integrating on bulk silicon is facing many challenges due to the hybrid integration. In addition to be fully compatible with the standard complementary‐metal‐oxide‐semiconductor (CMOS) process technology, the Si‐LED also avoids the challenges that are mentioned above through integrating with bulk silicon substrate monolithically