ZnO nanowires were subjected to convergent electron beam irradiation in a 300 kV transmission electron microscope. The size of perforated hexagonal pores generated by irradiation can vary with the beam size. An irradiated area is denuded layer by layer via removal of Zn and O atoms. The polar ZnO surfaces have a higher resistance to irradiation than the unpolar ones. Ultrathin nanobridges, ∼1 nm thick or less, were generated through deliberate removal of Zn and O atomic monolayers.</p
Ion beams can be used to permanently bend and re-align nanowires after growth. We have irradiated Zn...
A method of ion-beam-induced reduction in oxides is used to produce metal-bismuth nanowires embedded...
International audienceZnO nanowires were grown on sapphire substrates using metalorganic chemical va...
ZnO nanowires were subjected to convergent electron beam irradiation in a 300 kV transmission electr...
In-situ electron beam induced microstructural transformation experiments, leading to porosity in nan...
ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiat...
International audienceZnO nanowires are considered as attractive building blocks for piezoelectric d...
Metal oxide semiconductors such as ZnO have attracted much scientific attention due their material a...
ZnO nanowires were obtained through evaporation of zinc powders under a low temperature of 400 degre...
Abstract. Controlling the growth of zinc oxide nanowires is necessary to optimize the performances o...
The ability of modifying the surface properties plays a crucial role in nanostructures where the hig...
Catalyst-free methods are important for the fabrication of pure nanowires (NWs). However, the growth...
The ability of modifying the surface properties plays a crucial role in nanostructures where the hig...
The electrical service behavior of ZnO nanowires (NWs) with various diameters was investigated by a ...
Single-crystal ZnO nanowires are reacted at 800-900 °C in vacuum with alumina vapor generated by ele...
Ion beams can be used to permanently bend and re-align nanowires after growth. We have irradiated Zn...
A method of ion-beam-induced reduction in oxides is used to produce metal-bismuth nanowires embedded...
International audienceZnO nanowires were grown on sapphire substrates using metalorganic chemical va...
ZnO nanowires were subjected to convergent electron beam irradiation in a 300 kV transmission electr...
In-situ electron beam induced microstructural transformation experiments, leading to porosity in nan...
ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiat...
International audienceZnO nanowires are considered as attractive building blocks for piezoelectric d...
Metal oxide semiconductors such as ZnO have attracted much scientific attention due their material a...
ZnO nanowires were obtained through evaporation of zinc powders under a low temperature of 400 degre...
Abstract. Controlling the growth of zinc oxide nanowires is necessary to optimize the performances o...
The ability of modifying the surface properties plays a crucial role in nanostructures where the hig...
Catalyst-free methods are important for the fabrication of pure nanowires (NWs). However, the growth...
The ability of modifying the surface properties plays a crucial role in nanostructures where the hig...
The electrical service behavior of ZnO nanowires (NWs) with various diameters was investigated by a ...
Single-crystal ZnO nanowires are reacted at 800-900 °C in vacuum with alumina vapor generated by ele...
Ion beams can be used to permanently bend and re-align nanowires after growth. We have irradiated Zn...
A method of ion-beam-induced reduction in oxides is used to produce metal-bismuth nanowires embedded...
International audienceZnO nanowires were grown on sapphire substrates using metalorganic chemical va...