Thin films of nickel germanide conveniently form at the relatively low temperature of 300C in a matter of minutes and at even lower temperatures over a longer time. Here we report on the formation of NiGe on crystalline germanium substrates at low temperatures (less than 300C). Ni films deposited on Ge substrates formed NiGe by heating the samples in an atmosphere nearly void of oxygen. Ni films of thickness 50 to 400nm were deposited on crystalline germanium and heat treatments undertaken on samples for time durations at different temperatures of 5 minutes to 12 hours. It was found that the thickness was not a significant factor and that NiGe formed in a few minutes for all thicknesses heated at 300 C. Long durations were required for the ...
© 2017 IOP Publishing Ltd. The solid-phase reaction of ultrathin (≤10 nm) Ni films with different Ge...
Nickel germanide is deemed an excellent material system for low-resistance contact formation to fut...
A new n-Ge Ohmic contact scheme is demonstrated using a three stage deposition of Ni, Ge and Ni. The...
The formation of nickel germanide has been examined over a range of low temperatures (200-400 °C) in...
In this work, we studied the nickel germano-silicide formation on thin SiGe layers epitaxially-grown...
This work presents preparation of nickel germanide (Ni2Ge) thin films by atomic layer deposition (AL...
In this study, we focus on phase formation in intermixed Ni-Ge thin films as they represent a simpli...
A new approach is reported for depositing crystalline germanium films. The deposition occurs at low ...
A new approach is reported for depositing crystalline germanium films. The deposition occurs at low ...
© 2016 AIP Publishing LLC. We studied the solid-phase reaction between a thin Ni film and a single c...
In this paper, a novel nitrogen plasma pretreatment (NPP) has been experimentally demonstrated to im...
We have measured the physical properties and resistivity of nickel germanide thin films formed by th...
Germanium offers unique properties as a semiconductor materials for complementary metal–ox...
Thin films of polycrystalline germanium were formed by the pyrolysis of germane gas in a low-pressur...
The interfacial reactions and chemical phase formation between nickel and ultrahigh vacuum chemical ...
© 2017 IOP Publishing Ltd. The solid-phase reaction of ultrathin (≤10 nm) Ni films with different Ge...
Nickel germanide is deemed an excellent material system for low-resistance contact formation to fut...
A new n-Ge Ohmic contact scheme is demonstrated using a three stage deposition of Ni, Ge and Ni. The...
The formation of nickel germanide has been examined over a range of low temperatures (200-400 °C) in...
In this work, we studied the nickel germano-silicide formation on thin SiGe layers epitaxially-grown...
This work presents preparation of nickel germanide (Ni2Ge) thin films by atomic layer deposition (AL...
In this study, we focus on phase formation in intermixed Ni-Ge thin films as they represent a simpli...
A new approach is reported for depositing crystalline germanium films. The deposition occurs at low ...
A new approach is reported for depositing crystalline germanium films. The deposition occurs at low ...
© 2016 AIP Publishing LLC. We studied the solid-phase reaction between a thin Ni film and a single c...
In this paper, a novel nitrogen plasma pretreatment (NPP) has been experimentally demonstrated to im...
We have measured the physical properties and resistivity of nickel germanide thin films formed by th...
Germanium offers unique properties as a semiconductor materials for complementary metal–ox...
Thin films of polycrystalline germanium were formed by the pyrolysis of germane gas in a low-pressur...
The interfacial reactions and chemical phase formation between nickel and ultrahigh vacuum chemical ...
© 2017 IOP Publishing Ltd. The solid-phase reaction of ultrathin (≤10 nm) Ni films with different Ge...
Nickel germanide is deemed an excellent material system for low-resistance contact formation to fut...
A new n-Ge Ohmic contact scheme is demonstrated using a three stage deposition of Ni, Ge and Ni. The...