Solder thermal interface materials are often used in power semiconductors to enhance heat dissipation from silicon die to the heat spreader. Nonetheless, the presence of voids in the die bond layer impedes heat flow and thus increases the chip junction temperature. Such voids which form easily in the solder joint during solder reflow process at manufacturing stage are primarily occasioned by out-gassing phenomenon. Three-dimensional finite element analysis is employed to investigate the thermal effects of lead-free solder void percentages and configurations on packaged semiconductor device. The thermal resistance for each voiding case is calculated to evaluate the thermal response of the resultant electronic package. The results show that f...
textVoids in solder bumps have been a critical reliability issue as electronic components continue ...
Quad Flat No-Lead (QFN) packages have become very popular for turners, converters and audio amplifie...
textPhysical scaling limits of microelectronic devices and the need to improve electrical performanc...
Thermal characterisation of chip-scale packaged power devices is crucial to the development of advan...
Chip scale package (CSP) technology offers promising solutions to package power device due to its re...
Process-induced solder voids have three-dimensional shapes and show spatially random distribution wi...
Microscopic voids in the die attachment solder layers of power semiconductor devices degrade their o...
Reliability of electronic packages has become a major issue, particularly in systems used in electri...
Microscopic voids in the die attachment solder layers of power semiconductor devices degrade their o...
After lead-free technology, pre-existing voids in Power-MOSFET device solder connections have been a...
© 2011-2012 IEEE. This paper demonstrates to what extent the number of thermal cycles affects the me...
© 2011-2012 IEEE. This paper demonstrates to what extent the number of thermal cycles affects the me...
The electronics industry strives for miniaturization and diversification of functionality while the ...
Voids in solder joints are representing one of the main problems especially for power electronics. A...
textVoids in solder bumps have been a critical reliability issue as electronic components continue ...
textVoids in solder bumps have been a critical reliability issue as electronic components continue ...
Quad Flat No-Lead (QFN) packages have become very popular for turners, converters and audio amplifie...
textPhysical scaling limits of microelectronic devices and the need to improve electrical performanc...
Thermal characterisation of chip-scale packaged power devices is crucial to the development of advan...
Chip scale package (CSP) technology offers promising solutions to package power device due to its re...
Process-induced solder voids have three-dimensional shapes and show spatially random distribution wi...
Microscopic voids in the die attachment solder layers of power semiconductor devices degrade their o...
Reliability of electronic packages has become a major issue, particularly in systems used in electri...
Microscopic voids in the die attachment solder layers of power semiconductor devices degrade their o...
After lead-free technology, pre-existing voids in Power-MOSFET device solder connections have been a...
© 2011-2012 IEEE. This paper demonstrates to what extent the number of thermal cycles affects the me...
© 2011-2012 IEEE. This paper demonstrates to what extent the number of thermal cycles affects the me...
The electronics industry strives for miniaturization and diversification of functionality while the ...
Voids in solder joints are representing one of the main problems especially for power electronics. A...
textVoids in solder bumps have been a critical reliability issue as electronic components continue ...
textVoids in solder bumps have been a critical reliability issue as electronic components continue ...
Quad Flat No-Lead (QFN) packages have become very popular for turners, converters and audio amplifie...
textPhysical scaling limits of microelectronic devices and the need to improve electrical performanc...