We report far-infrared absorption in directly doped self-organized InAs quantum dots. Photoluminescence spectra demonstrate a blue shift in peak intensity for increasing doping in the quantum dots. Far-infrared absorption measurements using a Fourier transform infrared spectrometer show absorption in the range of 13–18 μm for quantum dots with Al0.15Ga0.85AsAl0.15Ga0.85As and GaAs as the barrier material. © 1997 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/71285/2/APPLAB-71-15-2079-1.pd
Infrared detectors in 3-5 μm and 8-12 μm regions are extensively used for applications in remote sen...
The theoretical analysis of intersubband optical transitions for InAs/ InGaAs quantum dots-in-a-well...
We report on a theoretical study of the relationship between interdiffusion and the conduction bando...
We report far-infrared photoconductivity in self-organized InAs/GaAs quantum dots grown by molecular...
We have studied the characteristics of intersubband absorption of polarized infrared (IR) radiation ...
[[abstract]]We have investigated the effects of silicon doping concentration within thirty-period se...
8 pages, 10 figuresThe electronic continuum states of InAs/GaAs semiconductor quantum dots embedded ...
Far-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions i...
International audienceInAs self-assembled quantum dots in InAlAs matrix grown on InP001 substrates h...
The objective of the present work is to study the growth of self-organized In(Ga,Al)As/GaAs quantum ...
Quantum dot infrared photodetectors (QDIPs) have been shown to be a key technology in mid and long w...
The objective of the present work is to study the growth of self-organized In(Ga,Al)As/GaAs quantum ...
Mid- and far-infrared (5-25$\mu$m) semiconductor sources and detectors are needed for medical, atmos...
Optical transitions and electronic properties of epitaxial InAs quantum dots (QDs) grown with and wi...
[[abstract]]© 2007 Elsevier - We have investigated the effects of silicon doping concentration withi...
Infrared detectors in 3-5 μm and 8-12 μm regions are extensively used for applications in remote sen...
The theoretical analysis of intersubband optical transitions for InAs/ InGaAs quantum dots-in-a-well...
We report on a theoretical study of the relationship between interdiffusion and the conduction bando...
We report far-infrared photoconductivity in self-organized InAs/GaAs quantum dots grown by molecular...
We have studied the characteristics of intersubband absorption of polarized infrared (IR) radiation ...
[[abstract]]We have investigated the effects of silicon doping concentration within thirty-period se...
8 pages, 10 figuresThe electronic continuum states of InAs/GaAs semiconductor quantum dots embedded ...
Far-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions i...
International audienceInAs self-assembled quantum dots in InAlAs matrix grown on InP001 substrates h...
The objective of the present work is to study the growth of self-organized In(Ga,Al)As/GaAs quantum ...
Quantum dot infrared photodetectors (QDIPs) have been shown to be a key technology in mid and long w...
The objective of the present work is to study the growth of self-organized In(Ga,Al)As/GaAs quantum ...
Mid- and far-infrared (5-25$\mu$m) semiconductor sources and detectors are needed for medical, atmos...
Optical transitions and electronic properties of epitaxial InAs quantum dots (QDs) grown with and wi...
[[abstract]]© 2007 Elsevier - We have investigated the effects of silicon doping concentration withi...
Infrared detectors in 3-5 μm and 8-12 μm regions are extensively used for applications in remote sen...
The theoretical analysis of intersubband optical transitions for InAs/ InGaAs quantum dots-in-a-well...
We report on a theoretical study of the relationship between interdiffusion and the conduction bando...