A simple one-dimensional theory is presented to assess the implantation of ions from the ion matrix sheath (IMS) in an ablated plasma plume that is approaching a negatively biased substrate. Under the assumption that the plume geometry, the electron and ion density distributions, and the potential distribution are frozen during the IMS extraction, the implanted ion current is calculated as a function of time for various substrate-plume separations. This model accurately recovers Lieberman’s classic results when the plume front is initially in contact with the substrate. © 2001 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70969/2/APPLAB-78-6-706-1.pd
The biggest advantage of plasma immersion ion implantation (PIII) is the capability of treating obje...
The purpose of the work presented here was the development of an ion source for low energy high flux...
The core of this project focuses on the development of a method for prediction of ion implantation d...
Experiments are reported in which two configurations for ablation-plasma-ion-implantation (APII) are...
The novel hybrid technique, Ablation Plasma Ion Implantation (APII), has been characterized and opti...
Experiments have been performed demonstrating the feasibility of direct implantation of laser-ablate...
The path of ions traversing the sheath region of a radio frequency plasma is modelled using the Chil...
Thesis (M.Sc.)-University of Natal, Durban, 1996.Plasma Source Ion Implantation (PSII) is the proces...
1980 Spring.Includes bibliographical references.An experimental investigation of the physical proces...
This thesis investigates ion energy distributions (IEDs) during plasma immersion ion implantation (P...
The path of ions traversing the sheath region of a radio frequency plasma is modelled using the Chil...
The sheath thickness in plasma immersion ion implantation has been investigated in the presence of a...
Sheaths and presheaths represent the response of a plasma to boundaries and are an instance of plasm...
Simulations of charging and profile evolution during etching of high aspect ratio polysilicon gates ...
The retained dose of implanted ions is limited by sputtering. It is known that a sacrificial layer d...
The biggest advantage of plasma immersion ion implantation (PIII) is the capability of treating obje...
The purpose of the work presented here was the development of an ion source for low energy high flux...
The core of this project focuses on the development of a method for prediction of ion implantation d...
Experiments are reported in which two configurations for ablation-plasma-ion-implantation (APII) are...
The novel hybrid technique, Ablation Plasma Ion Implantation (APII), has been characterized and opti...
Experiments have been performed demonstrating the feasibility of direct implantation of laser-ablate...
The path of ions traversing the sheath region of a radio frequency plasma is modelled using the Chil...
Thesis (M.Sc.)-University of Natal, Durban, 1996.Plasma Source Ion Implantation (PSII) is the proces...
1980 Spring.Includes bibliographical references.An experimental investigation of the physical proces...
This thesis investigates ion energy distributions (IEDs) during plasma immersion ion implantation (P...
The path of ions traversing the sheath region of a radio frequency plasma is modelled using the Chil...
The sheath thickness in plasma immersion ion implantation has been investigated in the presence of a...
Sheaths and presheaths represent the response of a plasma to boundaries and are an instance of plasm...
Simulations of charging and profile evolution during etching of high aspect ratio polysilicon gates ...
The retained dose of implanted ions is limited by sputtering. It is known that a sacrificial layer d...
The biggest advantage of plasma immersion ion implantation (PIII) is the capability of treating obje...
The purpose of the work presented here was the development of an ion source for low energy high flux...
The core of this project focuses on the development of a method for prediction of ion implantation d...