Perfect quantum wire structures are attractive candidates for low threshold lasers and high speed electronic devices because of the nature of the density of states and eigenfunctions. In this letter, we discuss the effect of structural disorder on the density of states as well as on the localization length of these eigenstates. We find that significant changes in the density of states and eigenfunctions occur with a small random disorder along the wire axis. Consequences for devices based on quantum wires are discussed.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70847/2/APPLAB-59-24-3142-1.pd
We study disordered quantum-well-based semiconductor superlattices where the disorder is intentiona...
We show that as one decreases the cross‐sectional area of quantum wire lasers, the threshold current...
In a previous paper (Eur. Phys. J. B 30, 239–251 (2002)) we have presented the main features and pro...
States induced by disorder are theoretically observed within a quantum wire and adatom system. The q...
We present a theory of local optical spectroscopy in quantum wires taking into account structural di...
We apply density-functional theory, in the local-density approximation, to a quasi-one-dimensional e...
We calculate the electron relaxation times in GaAs quantum wires of 100×100 Å and 200×200 Å cross se...
We study the signatures of disorder in the production of orbital electron entanglement in quantum wi...
The effects of fabricational variations on the gain spectra of quantum wires are calculated within t...
The effects of fabricational variations on the gain spectra of quantum wires are calculated within t...
The effects of fabricational variations on the gain spectra of quantum wires are calculated within t...
We study disordered quantum-well-based semiconductor superlattices where the disorder is intentiona...
Quantum wire lasers are expected to require very low threshold currents owing to the nature of the 1...
We study disordered quantum-well-based semiconductor superlattices where the disorder is intentional...
We study disordered quantum-well-based semiconductor superlattices where the disorder is intentiona...
We study disordered quantum-well-based semiconductor superlattices where the disorder is intentiona...
We show that as one decreases the cross‐sectional area of quantum wire lasers, the threshold current...
In a previous paper (Eur. Phys. J. B 30, 239–251 (2002)) we have presented the main features and pro...
States induced by disorder are theoretically observed within a quantum wire and adatom system. The q...
We present a theory of local optical spectroscopy in quantum wires taking into account structural di...
We apply density-functional theory, in the local-density approximation, to a quasi-one-dimensional e...
We calculate the electron relaxation times in GaAs quantum wires of 100×100 Å and 200×200 Å cross se...
We study the signatures of disorder in the production of orbital electron entanglement in quantum wi...
The effects of fabricational variations on the gain spectra of quantum wires are calculated within t...
The effects of fabricational variations on the gain spectra of quantum wires are calculated within t...
The effects of fabricational variations on the gain spectra of quantum wires are calculated within t...
We study disordered quantum-well-based semiconductor superlattices where the disorder is intentiona...
Quantum wire lasers are expected to require very low threshold currents owing to the nature of the 1...
We study disordered quantum-well-based semiconductor superlattices where the disorder is intentional...
We study disordered quantum-well-based semiconductor superlattices where the disorder is intentiona...
We study disordered quantum-well-based semiconductor superlattices where the disorder is intentiona...
We show that as one decreases the cross‐sectional area of quantum wire lasers, the threshold current...
In a previous paper (Eur. Phys. J. B 30, 239–251 (2002)) we have presented the main features and pro...