Numerical techniques are developed to study the output spectra and to solve the coupled mode rate equations for InxGa1−xAs/Al0.3Ga0.7As quantum well lasers. The optical properties of the laser are calculated from a 4×4 k⋅p band structure which includes the effects of strain. We find that the side modes are severely suppressed in the strained laser. Large signal switching of the laser is also studied and the role of strain is identified in the device response. If the laser is switched from the off state to a state of given photon density in the lasing mode, then the strained system exhibits a faster time response. If, however, the laser is switched from the off state to a state of given total photon density, then the strained system has a sl...
As material quality and processing techniques continue to improve over the years, the performance of...
Strained quantum-well lasers and modulators are studied in this dissertation. Both dc and high-speed...
The carrier density modulation response of a semiconductor laser medium is analyzed. The differentia...
The work described in this thesis investigates the effects of elastic strain on the performance of I...
In this thesis, the device physics of long wavelength strained quantum-well lasers is explored both ...
In this thesis the effect of the strain which is present in a lattice mismatched quantum well (QW) o...
We present numerical calculations of material gain and threshold current density in compressively st...
The focus of this investigation is to provide a unified understanding of the relative impact of comp...
Strained quantum well lasers have been the objects of intense research in the recent literature. In ...
Strained-layer quantum wells are interesting for applications in semiconductor lasers , because they...
Recent development of device-quality strained layer epitaxy facilitates the creation of a new genera...
130 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.Several characteristics of In...
We have studied a series of (111) oriented GaAs–InGaAs single quantum well, broad area lasers with a...
Compressive biaxial strain has been predicted to enhance the small‐signal modulation bandwidth of qu...
In the work reported in this thesis we have used hydrostatic pressure to investigate the band struct...
As material quality and processing techniques continue to improve over the years, the performance of...
Strained quantum-well lasers and modulators are studied in this dissertation. Both dc and high-speed...
The carrier density modulation response of a semiconductor laser medium is analyzed. The differentia...
The work described in this thesis investigates the effects of elastic strain on the performance of I...
In this thesis, the device physics of long wavelength strained quantum-well lasers is explored both ...
In this thesis the effect of the strain which is present in a lattice mismatched quantum well (QW) o...
We present numerical calculations of material gain and threshold current density in compressively st...
The focus of this investigation is to provide a unified understanding of the relative impact of comp...
Strained quantum well lasers have been the objects of intense research in the recent literature. In ...
Strained-layer quantum wells are interesting for applications in semiconductor lasers , because they...
Recent development of device-quality strained layer epitaxy facilitates the creation of a new genera...
130 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.Several characteristics of In...
We have studied a series of (111) oriented GaAs–InGaAs single quantum well, broad area lasers with a...
Compressive biaxial strain has been predicted to enhance the small‐signal modulation bandwidth of qu...
In the work reported in this thesis we have used hydrostatic pressure to investigate the band struct...
As material quality and processing techniques continue to improve over the years, the performance of...
Strained quantum-well lasers and modulators are studied in this dissertation. Both dc and high-speed...
The carrier density modulation response of a semiconductor laser medium is analyzed. The differentia...