Linear electro-optic effect due to the built-in electric field in InGaN/GaN quantum wells

A strong piezoelectric effect and large lattice mismatch allow one to incorporate high built-in electric fields in InGaN/GaN quantum wells. This letter examines the implications of these fields on the absorption spectra and refractive index changes induced by an external perpendicular electric field. We find that InGaN/GaN quantum wells show linear electro-optic effect due to quantum confined Stark effect. Our results suggest application of InGaN/GaN quantum wells in Mach–Zehnder type modulators and in electroabsorption modulators in the blue light region. © 1999 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70668/2/APPLAB-75-13-1932-1.pd