We have investigated the structural and compositional uniformity of a set of ZnSnP2/GaAsZnSnP2/GaAs superlattices grown by gas-source molecular-beam epitaxy. Cross-sectional scanning tunneling microscopy reveals an asymmetry in interface abruptness, with the ZnSnP2ZnSnP2 on GaAs interfaces apparently much smoother than the GaAs on ZnSnP2ZnSnP2 interfaces. The increased roughness of the GaAs on ZnSnP2ZnSnP2 interface occurs simultaneously with the apparent surface segregation of Sn. High-resolution x-ray diffraction and photoluminescence spectroscopy suggest that the ZnSnP2ZnSnP2 regions consist of a mixture of ZnSnP2ZnSnP2 and ZnSnAs2.ZnSnAs2. This is further confirmed by cross-sectional scanning tunneling microscopy and spectroscopy, which...
ZnS layers grown on GaAs and GaP substrates at 600~700 \C\ by vapor phase epitaxy were compared by s...
[[abstract]]Various x-ray techniques have been applied to a study of semiconductor superlattices con...
GeMn/Ge epitaxial 'superlattices' grown by molecular beam epitaxy with different growth conditions h...
Interdiffusion and segregation are fundamental processes that lead to changes in structural and comp...
We report on the structural characterization of ZnS epilayers grown on (100)GaAs by metalorganic vap...
ZnSnP ~ is a potentially useful semiconductor which can have either the sphalerite structure or the ...
Lateral composition modulation on the group V sublattice has been investigated in GaAs/GaSb short pe...
The growth conditions of multi-quantum wells (MQWs) and superlattices (SLs) have been optimized and ...
In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs...
Superlattice structures (SLs) with type-II (GaAsSb/GaAsN) and -I (GaAsSbN/GaAs) band alignments have...
Two GaAs(200 nm)/Sc0.2Yb0.8As(2 nm)/GaAs heterostructures have been grown by molecular beam epitaxy;...
A set of GaAs1−xBix/GaAs multilayer quantum-well structures was deposited by metal-organic vapor pha...
InAs/GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (...
The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is invest...
The structural characterization of ZnS epilayers grown on (100)GaAs by H2 transport vapour-phase epi...
ZnS layers grown on GaAs and GaP substrates at 600~700 \C\ by vapor phase epitaxy were compared by s...
[[abstract]]Various x-ray techniques have been applied to a study of semiconductor superlattices con...
GeMn/Ge epitaxial 'superlattices' grown by molecular beam epitaxy with different growth conditions h...
Interdiffusion and segregation are fundamental processes that lead to changes in structural and comp...
We report on the structural characterization of ZnS epilayers grown on (100)GaAs by metalorganic vap...
ZnSnP ~ is a potentially useful semiconductor which can have either the sphalerite structure or the ...
Lateral composition modulation on the group V sublattice has been investigated in GaAs/GaSb short pe...
The growth conditions of multi-quantum wells (MQWs) and superlattices (SLs) have been optimized and ...
In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs...
Superlattice structures (SLs) with type-II (GaAsSb/GaAsN) and -I (GaAsSbN/GaAs) band alignments have...
Two GaAs(200 nm)/Sc0.2Yb0.8As(2 nm)/GaAs heterostructures have been grown by molecular beam epitaxy;...
A set of GaAs1−xBix/GaAs multilayer quantum-well structures was deposited by metal-organic vapor pha...
InAs/GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (...
The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is invest...
The structural characterization of ZnS epilayers grown on (100)GaAs by H2 transport vapour-phase epi...
ZnS layers grown on GaAs and GaP substrates at 600~700 \C\ by vapor phase epitaxy were compared by s...
[[abstract]]Various x-ray techniques have been applied to a study of semiconductor superlattices con...
GeMn/Ge epitaxial 'superlattices' grown by molecular beam epitaxy with different growth conditions h...